NTMFS4835N ON Semiconductor, NTMFS4835N Datasheet - Page 5

• Manufacturer Part Number: NTMFS4835N
• Description: Power Mosfet 30 V, 104 A, Single N-channel, So-8 Fl
• Manufacturer: ON Semiconductor

1000
1000
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
100
5000
4500
4000
3500
3000
2500
2000
1500
1000
0.1
10
10
500
1
1
0
-15
1
0.1
V
I
V
D
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
DS
GS
C
GS
= 15 A
V
-10
= 25°C
C
C
= 15 V
= 11.5 V
DS
= 20 V
iss
rss
Figure 9. Resistive Switching Time
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
-5
R
THERMAL LIMIT
PACKAGE LIMIT
V
R
DS(on)
GS
G
Safe Operating Area
, GATE RESISTANCE (W)
1
0
LIMIT
V
DS
5
10
10
10
TYPICAL PERFORMANCE CURVES
15
t
t
t
t
d(off)
r
d(on)
f
T
20
J
= 25°C
10 ms
100 ms
1 ms
10 ms
dc
http://onsemi.com
C
C
NTMFS4835N
25
iss
oss
100
100
30
5
12
10
8
6
4
2
0
0
400
360
320
280
240
200
160
120
30
25
20
15
10
80
40
5
0
0
Q
Figure 8. Gate-To-Source and Drain-To-Source
0.4
25
V
gs
5
DS
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
V
T
T
V
10
GS
J
J
SD
= 25°C
0.5
, STARTING JUNCTION TEMPERATURE (°C)
Q
Q
= 0 V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
gd
G
Starting Junction Temperature
15
50
, TOTAL GATE CHARGE (nC)
Voltage vs. Total Charge
0.6
20
25
Q
75
T
0.7
30
0.8
35
100
40
V
GS
0.9
I
T
D
I
45
J
D
= 30 A
= 25°C
= 28 A
125
50
1.0
55
20
18
16
14
12
10
8
6
4
2
0
150
1.1