BTS112A Infineon Technologies Corporation, BTS112A Datasheet - Page 7

• Manufacturer Part Number: BTS112A
• Description: Power Mosfets
• Manufacturer: Infineon Technologies Corporation

Continuous drain current
Parameter:
Typ. gate-source leakage current
I
Parameter:
GSS
=
f
(
T
C
)
V
V
GS
GS
= – 20 V,
– 10 V
V
DS
I
D
= 0
=
f
(
T
C
)
7
Forward characteristics of reverse diode
I
Parameter
Typ. capacitances
Parameter:
F
=
f
(
V
SD
)
: T
V
j
GS
,
t
p
= 0,
= 80 s
TEMPFET
C
f
= 1 MHz
=
f
(
V
DS
)
®
BTS 112 A
19.02.04