SIR468DP Vishay, SIR468DP Datasheet

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SIR468DP

Manufacturer Part Number
SIR468DP
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SIR468DP
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SIR468DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SIR468DP-T1-GE3
Manufacturer:
V1SHAY
Quantity:
20 000
Company:
Part Number:
SIR468DP-T1-GE3
Quantity:
50
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 68824
S-82287-Rev. B, 22-Sep-08
Ordering Information: SiR468DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
6.15 mm
D
7
D
C
= 25 °C. Package limited.
0.0076 at V
6
0.0057 at V
D
PowerPAK SO-8
Bottom View
5
R
http://www.vishay.com/ppg?73257
D
DS(on)
GS
GS
J
1
(Ω)
= 150 °C)
= 4.5 V
S
= 10 V
b, f
2
S
N-Channel 30-V (D-S) MOSFET
3
S
5.15 mm
4
I
G
D
40
40
(A)
Steady State
a
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
13.8 nC
g
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• Low-Side Switch
100 % UIS Tested
Notebook DC/DC
Typical
2.0
20
g
Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
22.7
19.7
4.1
3.2
Limit
± 20
5
260
40
40
40
30
70
35
61
50
32
b, c
b, c
b, c
a
a
b, c
b, c
a
D
S
Maximum
2.5
25
Vishay Siliconix
SiR468DP
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
A
1

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SIR468DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR468DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... SiR468DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 68824 S-82287-Rev. B, 22-Sep- 1 SiR468DP Vishay Siliconix 1.2 1.0 0 °C C 0.6 0 125 °C C 0.2 0.0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2400 C 1800 iss 1200 ...

Page 4

... SiR468DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 0.020 °C J 0.015 0.010 °C J 0.005 ...

Page 5

... Package Limited 100 T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiR468DP Vishay Siliconix 125 150 2.5 2.0 1.5 1.0 0.5 0 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...

Page 6

... SiR468DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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