SIR164DP Vishay, SIR164DP Datasheet

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SIR164DP

Manufacturer Part Number
SIR164DP
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 65 °C/W.
e. Package limited.
f. See Solder Profile (
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 64827
S09-0701-Rev. A, 27-Apr-09
Ordering Information: SiR164DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.0032 at V
6
0.0025 at V
D
PowerPAK SO-8
Bottom View
5
www.vishay.com/ppg?73257
R
D
DS(on)
GS
GS
J
1
(Ω)
= 150 °C)
= 4.5 V
S
= 10 V
b, d
2
S
N-Channel 30-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
(A)
50
50
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
Steady State
a, e
f, g
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
40.6 nC
g
(Typ.)
New Product
Symbol
R
R
thJC
thJA
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New MOSFET Technology Optimized for
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• DC/DC
• Notebook CPU Core
Definition
Ringing Reduction in Switching Application
Typical
1.2
19
g
and UIS Tested
®
Gen III Power MOSFET
- 55 to 150
33.3
26.5
4.7
5.2
3.3
Limit
± 20
44.4
260
50
50
50
30
70
40
80
69
b, c
b, c
b, c
e
e
e
b, c
b, c
Maximum
1.8
24
Vishay Siliconix
G
N-Channel MOSFET
SiR164DP
www.vishay.com
D
S
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SIR164DP Summary of contents

Page 1

... Bottom View Ordering Information: SiR164DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... SiR164DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 1.5 2.0 2.5 5200 4160 3120 2080 1040 1.8 1.6 1.4 1 1.0 0.8 0 SiR164DP Vishay Siliconix ° 125 ° °C C 0.0 0.8 1.6 2.4 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... SiR164DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.012 0.010 0.008 °C J 0.006 0.004 0.002 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR164DP Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR164DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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