MTD1P40E ON Semiconductor, MTD1P40E Datasheet - Page 4

• Manufacturer Part Number: MTD1P40E
• Description: Power Mosfet 1 Amp, 400 Volts
• Manufacturer: ON Semiconductor

1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
12
10
1.75
1.25
0.75
0.25
8
6
4
2
0
0
1.5
0.5
0
0
0
2
1
− 50
T
Figure 3. On−Resistance versus Drain Current
J
= 25 C
V
0.2
V
I
D
1
GS
GS
Figure 5. On−Resistance Variation with
= 0.5 A
− 25
Figure 1. On−Region Characteristics
= 10 V
= 10 V
V
0.4
DS
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
0.6
I
0
3
D
J
, JUNCTION TEMPERATURE ( C)
, DRAIN CURRENT (AMPS)
and Temperature
T
0.8
4
Temperature
J
25
= 100 C
−55 C
25 C
5
1
50
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
6
75
1.4
8 V
7
V
GS
100
1.6
8
= 10 V
1.8
http://onsemi.com
125
9
5.5 V
4.5 V
4 V
6 V
5 V
MTD1P40E
10
2
150
4
1000
100
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
1.5
0.5
10
2
1
0
0
0
0
Figure 4. On−Resistance versus Drain Current
V
V
T
GS
DS
J
0.2
= 25 C
= 0 V
10 V
Figure 6. Drain−To−Source Leakage
V
Figure 2. Transfer Characteristics
V
0.4
100
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
Current versus Voltage
0.6
I
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
T
0.8
200
J
V
= 125 C
GS
= 10 V
100 C
1
4
T
J
= −55 C
300
1.2
15 V
1.4
25 C
6
400
1.6
1.8
500
2
8