VN1304 Supertex, Inc., VN1304 Datasheet

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VN1304

Manufacturer Part Number
VN1304
Description
N-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Ordering Information
Features
Applications
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
BV
100V
40V
60V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
8.0
8.0
8.0
DS(ON)
(min)
I
0.5A
0.5A
0.5A
D(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55 C to +150 C
BV
BV
300 C
VN1306N2
Order Number / Package
20V
DSS
DGS
TO-39
7-191
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
VN1310N3
TO-92
Case: DRAIN
TO-39
D G S
TO-92
S G D
VN1304
VN1306
VN1310
7

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VN1304 Summary of contents

Page 1

... Package Options BV DSS BV DGS 20V - +150 C 300 C Note: See Package Outline section for dimensions. 7-191 VN1304 VN1306 VN1310 TO-92 TO-39 Case: DRAIN 7 ...

Page 2

... VN1306 60 VN1304 40 0.8 2.4 -3.9 -5.0 100 100 0.25 0.6 0.50 1.4 5.0 15 5.0 8.0 0.8 120 1.0 1.3 350 90% GENERATOR t (OFF d(OFF) F 10% 90% 7-192 VN1304/VN1306/VN1310 C/W C/W 41 125 0.4A 125 170 0.25A Unit Conditions 0V 1mA 1mA mV 1mA 20V ...

Page 3

... 10V 8V 1.2 6V 0.8 0 2 125 C A 0.5 0 1.6 2.0 1.0 0.8 0.6 TO-39 (pulsed) 0.4 0 100 0.001 7-193 VN1304/VN1306/VN1310 Saturation Characteristics 10V (volts) DS Power Dissipation vs. Ambient Temperature TO-39 TO- 100 125 Thermal Response Characteristics TO- 3. TO- ...

Page 4

... V (volts) GS Capacitance vs. Drain-to-Source Voltage 1MHz (volts) DS 100 150 ISS C RSS 30 40 7-194 VN1304/VN1306/VN1310 On-Resistance vs. Drain Current 10V 0.3 0.6 0.9 1.2 I (amperes and R Variation with Temperature (th 10V, 500mA ...

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