SIHFL911 Vishay, SIHFL911 Datasheet - Page 7
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SIHFL911
Manufacturer Part Number
SIHFL911
Description
Power Mosfet
Manufacturer
Vishay
Datasheet
1.SIHFL911.pdf
(8 pages)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91196.
Document Number: 91196
S09-1287-Rev. C, 13-Jul-09
Re-applied
voltage
Reverse
recovery
current
+
R
-
Compliment N-Channel of D.U.T. for driver
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
P.W.
= - 5 V for logic level and - 3 V drive devices
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
IRFL9110, SiHFL9110
GS
DD
= - 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
7