PH1214-100EL Tyco Electronics, PH1214-100EL Datasheet
PH1214-100EL
Manufacturer Part Number
PH1214-100EL
Description
Radar Pulsed Power Transistor, 100 Watts, 1.2 - 1.4 Ghz, 2 Ms Pulse, 20% Duty
Manufacturer
Tyco Electronics
Datasheet
1.PH1214-100EL.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PH1214-100EL
Manufacturer:
XILINX
Quantity:
125
Radar Pulsed Power Transistor, 100 Watts,
1.2 - 1.4 GHz, 2 ms Pulse, 20% Duty
Features
Absolute Maximum Ratings at 25 °C
Electrical Characteristics at 25 °C
Collector-Emitter Breakdown
Collector-Emitter Leakage
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Overdrive Stability
Load Mismatch Tolerance
Load Mismatch Stability
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +45 °C
Storage Temperature
Junction Temperature
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Parameter
Parameter
Symbol
V
V
P
T
CES
EBO
I
TOT
STG
T
C
VSWR-T
VSWR-S
j
Symbol
R
BV
OD-S
I
TH(JC)
P
G
RL
CES
η
CES
O
P
-65 to +200
Rating
14.1
214
3.0
200
70
Min.
100
6.0
70
52
-
8
-
-
-
-
Max.
1.5:1
Units
+1.0
0.7
3:1
10
°C
°C
W
-
-
-
-
-
V
V
A
Units
°C/W
mA
dB
dB
dB
W
%
V
-
-
Outline Drawing
I
V
V
V
V
V
V
V
V
V
C
CE
CC
CC
CC
CC
CC
CC
CC
CC
=50 mA
=28 V
=28 V, P
=28 V, P
=28 V, P
=28 V, P
=28 V, P
=28 V, P
=28 V, P
=28 V, P
IN
IN
IN
IN
IN
IN
IN
IN
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
= 25 W, Freq= 1.20, 1.30, 1.40 GHz
Test Conditions
Rev. 3
8/21/02
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PH1214-100EL Summary of contents
Page 1
Radar Pulsed Power Transistor, 100 Watts, 1.2 - 1.4 GHz Pulse, 20% Duty Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal ...
Page 2
... Visit www.macom.com for additional data sheets and product information. F (GHz) TEST FIXTURE OUTPUT 1.20 CIRCUIT 1. 50Ω 1.40 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 PH1214-100EL 8/21/02 Rev (Ω) Z (Ω 2.6 –j3.8 3.0 –j2.7 3.0 –j3.4 2.4 –j2.6 3.4 – ...