NTR4502P ON Semiconductor, NTR4502P Datasheet - Page 2

• Manufacturer Part Number: NTR4502P
• Description: Power Mosfet -30v, -1.95 A, Single, P-channel Sot-23
• Manufacturer: ON Semiconductor

2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Electrical Characteristics
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Parameter
(T
J
= 25 C unless otherwise specified)
V
Symbol
V
Q
R
Q
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
DS(on)
d(ON)
V
g
DSS
GSS
G(TH)
t
OSS
RSS
RR
FS
ISS
t
t
GS
GD
SD
r
f
(
)
http://onsemi.com
V
NTR4502P
V
GS
V
GS
GS
V
= 0 V, dI
GS
= −10 V, V
= 0 V, V
2
V
V
V
V
= 0 V, f = 1 MHz, V
V
V
V
V
GS
GS
I
I
GS
GS
DS
D
GS
DS
GS
= −1.95 A, R
SD
=−10 V, V
= −10 V, I
= −4.5 V, I
Test Condition
= V
= −10 V, I
= 0 V, I
= 0 V, V
= 0 V, I
DS
/d
1 95 A R
DS
DS
t
= −30 V
= 100 A/ms, I
, I
= −15 V; I
D
S
D
GS
D
DD
= −250 mA
D
= −1.25 A
= −250 mA
D
= −1.95 A
=−1.25 A
G
= 20 V
= −1.5 A
= −15 V,
= 6 W
DS
6 W
D
= −15 V
S
= −1.95 A
= −1.25 A
T
T
J
J
= 25 C
= 55 C
−1.0
Min
−30
17.5
−0.8
Typ
155
240
200
0.3
1.7
5.2
80
50
12
19
23
3
6
1
Max
−3.0
−1.2
−10
200
350
−1
100
10
10
20
35
30
Unit
mW
mA
nA
nC
pF
ns
ns
V
V
S
V