2N2857C1 Semelab Group, 2N2857C1 Datasheet
2N2857C1
Related parts for 2N2857C1
2N2857C1 Summary of contents
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... SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 High Current Gain-Bandwidth Product ( Hermetic Ceramic Surface Mount Package Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS V CBO Collector – Base Voltage V CEO Collector – Emitter Voltage V EBO Emitter – ...
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... SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 ELECTRICAL CHARACTERISTICS Symbols Parameters Collector-Emitter (1) V (BR)CEO Breakdown Voltage I CBO Collector-Cut-Off Current I CES Collector-Cut-Off Current I EBO Emitter-Cut-Off Current Forward-current transfer ( ratio Collector-Emitter Saturation (1) V CE(sat) Voltage Base-Emitter Saturation (1) V BE(sat) Voltage DYNAMIC CHARACTERISTICS Small signal forward-current ...
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... SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 2 (0.075 ± 0.004) PACKAGE VARIANT TABLE Variant Pad 1 C1A Base C1B Base * The additional contact provides a connection to the lid in the application. Connecting the metal lid to a known electrical potential stops deep dielectric discharge in space applications ...
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... JQRS screening, additional Group C conformance testing and a Data pack. Part Numbers: 2N2857C1B-JQRS 2N2857C1B-JQRS.GRPC 2N2857C1B-JQRS.GCDE 2N2857C1B-JQRS.GCDM 2N2857C1B-JQRS.DA Customers with any specific requirements (e.g. marking, package or screening) may be supplied with a similar alternative part number (there is maximum 20 character limit to part numbers). Requirements for deep dielectric discharge variant (C1B) must be specified at time of order ...