BFQ81 Vishay, BFQ81 Datasheet - Page 2

• Manufacturer Part Number: BFQ81
• Description: Silicon Npn Planar Rf Transistor
• Manufacturer: Vishay

BFQ81
Vishay Semiconductors
Electrical DC Characteristics
T
Electrical AC Characteristics
T
www.vishay.com
2
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
DC forward current transfer ratio V
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage - two tone
intermodulation test
Third order intercept point
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
V
V
V
I
I
V
V
f = 500 MHz
V
f = 500 MHz
V
V
V
V
Z
V
Z
V
Z
f = 800 MHz
V
d
f
V
f = 800 MHz
C
C
2
S
S
S
IM
CE
CB
EB
CE
CE
CE
CE
CB
CE
EB
CE
CE
CE
CE
CE
= 810 MHz, Z
= 1 mA, I
= 30 mA, I
= 50 Ω, f = 800 MHz
= Z
= 50 Ω, Z
= 60 dB, f
= 25 V, V
= 20 V, I
= 2 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
= 0.5 V, f = 1 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
Sopt
Test condition
Test condition
, f = 2 GHz
C
B
L
E
B
C
C
C
C
C
C
C
C
C
= 0
= 0
1
BE
= Z
= 0
= 3 mA
= 5 mA
= 15 mA
= 5 mA,
= 15 mA,
= 5 mA,
= 5 mA,
= 5 mA,
= 25 mA,
= 25 mA,
= 806 MHz,
S
= 0
Lopt
= Z
L
,
= 50 Ω
V
Symbol
Symbol
V
V
(BR)CEO
I
I
I
1
C
G
CBO
CEsat
h
h
C
C
CES
EBO
IP
f
f
F
F
FE
FE
= V
T
T
eb
cb
ce
pe
3
2
Min
Min
16
70
70
0.35
Typ.
Typ.
100
100
160
0.2
4.2
5.8
0.2
1.1
1.4
2.5
15
27
Document Number 85023
Max
Max
100
100
150
0.5
10
Rev. 1.5, 28-Apr-05
GHz
GHz
dBm
Unit
Unit
mV
μA
nA
μA
dB
dB
dB
pF
pF
pF
V
V