LBN150B01 Diodes, Inc., LBN150B01 Datasheet - Page 5

• Manufacturer Part Number: LBN150B01
• Description: 150 Ma Load Switch Featuring Complementary Bipolar Transistors
• Manufacturer: Diodes, Inc.

Characteristics of PNP Transistor (Q1):
DS30749 Rev. 4 - 2
1,000
100
0.4
0.2
0.01
0.8
0.6
1.4
1.2
100
10
0.1
10
1
0
1
0.1
1
1
0.1
Fig. 9 Typical DC Current Gain vs. Collector Current
T = 85 C
T = 150 C
A
A
T = 85 C
T = 25 C
Fig. 11 Collector-Emitter Saturation Voltage
A
A
Fig. 13 Base-Emitter Saturation Voltage
°
°
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
°
C
°
T = 25 C
C
A
1
1
T = 25 C
T = 125 C
A
A
vs. Collector Current
10
°
vs. Collector Current
T = 85 C
T = 125 C
°
A
A
°
T = -55 C
°
A
T = -55 C
°
10
A
10
°
T = -55 C
°
A
T = 150 C
T = 125 C
A
100
A
°
T = 150 C
100
A
°
100
°
V
CE
V
I /I = 1
C B
CE
= 1V
°
= 1V
1,000
1,000
1,000
www.diodes.com
5 of 7
200
150
100
0.6
0.2
1.4
1.2
0.8
0.4
50
12
0
1
0
9
6
3
0.1
1
Fig. 10 Collector Current vs. Collector-Emitter Voltage
0
T = 125 C
V , COLLECTOR - EMITTER VOLTAGE (V)
A
Fig. 14 Typical Capacitance Characteristics
CE
Fig. 12 Base-Emitter Turn-On Voltage
T = 25 C
I , COLLECTOR CURRENT (mA)
C
A
°
2
V , REVERSE VOLTAGE (V)
1
°
R
vs. Collector Current
T = 150 C
A
4
T = -55 C
A
10
10
°
°
12
6
V
CE
T = 85 C
A
14
= 1V
100
°
16
8
© Diodes Incorporated
18
LBN150B01
1,000
10
20