Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @T
Thermal Resistance, Junction to Ambient Air @T
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product (Note 4)
Input Resistance
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Notes:
DS31207 Rev. 3 - 2
Epitaxial Planar Die Construction
Surface Mount Package Suited for Automated Assembly
Simplifies Circuit Design and Reduces Board Space
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-353
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed Over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
4. Characteristics of transistor. For reference only.
http://www.diodes.com/datasheets/ap02001.pdf.
A
Characteristic
= 25°C (Note 3)
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
= 25°C (Note 3)
V
V
V
Symbol
V
www.diodes.com
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
I
I
h
CBO
EBO
R
f
FE
T
1
1 of 3
Symbol
Symbol
T
Min
100
3
4
5.0
50
50
⎯
⎯
⎯
⎯
TOP VIEW
V
V
V
j
7
R
, T
P
CBO
CEO
EBO
I
θ JA
C
D
STG
2
Typ
330
250
Schematic and Pin Configuration
10
⎯
⎯
⎯
⎯
⎯
⎯
1
5
DUAL NPN PRE-BIASED TRANSISTOR
Max
600
0.5
0.5
0.3
13
⎯
⎯
⎯
⎯
SOT-353
-55 to +150
Unit
MHz
Value
Value
μA
μA
kΩ
⎯
100
150
833
V
V
V
V
50
50
5
(4)
R1
(3)
I
I
I
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
= 50μA, I
= 50μA, I
= 1mA, I
= 10mA, I
= 4V, I
= 50V, I
= 5V, I
= 10V, I
(2)
Test Condition
UMG4N
B
C
C
E
C
E
B
E
= 0
= 0
= 1mA
= 0
= 0
= 0
= 1mA
= -5mA, f = 100MHz
(1)
⎯
R1
(5)
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
°C
V
V
V
UMG4N
