DIM200WKS17-A000 Dynex Semiconductor, DIM200WKS17-A000 Datasheet - Page 3
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DIM200WKS17-A000
Manufacturer Part Number
DIM200WKS17-A000
Description
Chopper Module - Upper Arm Control
Manufacturer
Dynex Semiconductor
Datasheet
1.DIM200WKS17-A000.pdf
(8 pages)
Symbol
ELECTRICAL CHARACTERISTICS
T
Note:
* L is the circuit inductance + L
V
V
SC
case
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
CE(sat)
Measured at the power busbars and not the auxiliary terminals
R
I
I
GE(TH)
C
V
I
CES
GES
L
I
FM
INT
F
F
ies
M
Data
Á
= 25° C unless stated otherwise.
SEMICONDUCTOR
Á
Collector cut-off current
(IGBT and Diode arm)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT and Diode arm)
Input capacitance
Module inductance per arm
Internal resistance per arm
Short circuit. I
Parameter
sc
M
V
V
V
I
V
V
DC
t
I
I
V
T
t
V
IEC 60747-9
C
p
F
F
p
j
GE
GE
GE
GE
GE
CE
CE(max)
= 1ms
= 200A
= 200A, T
= 125° C, V
= 10mA, V
10µs,
= 25V, V
= 0V, V
= 0V, V
= ±20V, V
= 15V, I
= 15V, I
= V
Test Conditions
CES
CE
CE
case
C
C
GE
GE
= 200A
= 200A, T
cc
CE
= V
= V
- L*.di/dt
= V
= 0V, f = 1MHz
= 125° C
= 1000V,
= 0V
CES
CES
-
-
CE
, T
case
case
= 125° C
= 125° C
I
I
1
2
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.23
900
800
5.5
2.7
3.4
2.2
2.3
15
20
DIM200WKS17-A000
-
-
-
-
-
Max.
200
400
6.5
3.4
4.0
2.5
2.6
1
6
2
-
-
-
-
-
3
/
8
Units
mA
mA
m
nH
µA
nF
V
V
V
A
A
V
V
A
A