DIM200WLS17-A000 Dynex Semiconductor, DIM200WLS17-A000 Datasheet

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DIM200WLS17-A000

Manufacturer Part Number
DIM200WLS17-A000
Description
Chopper Module - Lower Arm Control
Manufacturer
Dynex Semiconductor
Datasheet
FEATURES
APPLICATIONS
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 1200V to 3300V and currents up to 3600A.
The DIM200WLS17-A000 is a half bridge 1700V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10 s short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200WLS17-A000
Note: When ordering, please use the whole part number.
.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Non Punch Through Silicon
Isolated Copper Baseplate
10 s Short Circuit Withstand
Lead Free construction
Choppers
Motor Controllers
Induction Heating
Resonant Converters
Power Supplies
KEY PARAMETERS
V
V
I
I
*(Measured at power busbars and not at auxiliary terminals)
C
C(PK)
CES
CE (sat)
6(G
7(E
Chopper Module - Lower Arm
1(A,C2)
(See package details for further information)
2
2
)
)
*
Fig. 1 Chopper circuit diagram
DIM200WLS17-A000
Fig. 2 Module outline
(typ)
(max)
(max)
Outline type code: W
Control
2(E2)
DS5698-1.2 July 2007 (LN25358)
1700V
2.7 V
200A
400A
3(K)
1/8

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DIM200WLS17-A000 Summary of contents

Page 1

... The DIM200WLS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...

Page 2

... Copper 24mm 13mm 175 Test Conditions Continuous dissipation – junction to case Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode - Mounting – M6 Electrical connections – M6 DIM200WLS17-A000 Max. Units 1700 V ±20 V 200 A 400 A 1390 4000 V Min ...

Page 3

... case 1ms 200A 200A 125° case V = 25V 0V 1MHz 125° 1000V 10µ L*.di/dt CE(max) CES IEC 60747-9 DIM200WLS17-A000 Min. Typ. Max. Units - - µA 4.5 5.5 6 2.7 3 3.4 4 200 400 A - 2.2 2 ...

Page 4

... R = 4.7 R =4.7 G(ON) G(OFF) L 100nH I = 200A 900 /dt = 3000A/µs F Test Conditions I = 200A ±15V 900V 4.7 G(ON) G(OFF) L 100nH I = 200A 900 /dt = 2500A/µs F DIM200WLS17-A000 Min. Typ. Max. Units - 590 - ns - 300 - 320 - µ µC - 195 - ...

Page 5

... C 120 V cc 100 off E 20 rec - ( Fig.6 Typical switching energy vs gate resistance DIM200WLS17-A000 = 125°C is measured at power busbars 1.5 2 2.5 3 3.5 4 4.5 Collector-emitter voltage (V) ce Fig.4 Typical output characteristics = 125˚C, = 900V Gate resistance (Ohms) ...

Page 6

... g(off) 0 2.5 3.0 3.5 0 200 - (V) F Fig.8 Reverse bias safe operating area 1000 100 10 2000 1600 1 - (V) R 0.001 DIM200WLS17-A000 Chip Module = 125° 15V = 4.7 Ohms 400 600 800 1000 1200 1400 1600 1800 Collector emitter voltage ( IGBT R (°C/KW) 2.10 11.62 43. (ms) ...

Page 7

... For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7 6 1(A,C2) 2(E2) 3(K) Nominal weight: 420g Module outline type code: W Fig.11 Package details DIM200WLS17-A000 7/8 ...

Page 8

... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com POWER ASSEMBLY CAPABILITY e-mail: power_solutions@dynexsemi.com CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. DIM200WLS17-A000 http://www.dynexsemi.com 8/8 ...

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