DIM800DDM17-A000 Dynex Semiconductor, DIM800DDM17-A000 Datasheet
DIM800DDM17-A000
Related parts for DIM800DDM17-A000
DIM800DDM17-A000 Summary of contents
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... The DIM800DDM17-A000 is a dual switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM800DDM17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature j T Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DDM17-A000 Min. Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode – ...
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... DIM800DDM17-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol Collector cut-off current I CES Gate leakage current I GES Gate threshold voltage V GE(TH) † V Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM † V Diode forward voltage F Input capacitance ...
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... E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy REC Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM800DDM17-A000 Test Conditions Min 800A - 15V - 900V - CE ...
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... DIM800DDM17-A000 TYPICAL CHARACTERISTICS 1800 Common emitter T = 25˚C case 1600 V is measured at power busbars ce and not the auxiliary terminals 1400 1200 1000 800 600 400 200 0 0 0.5 1 1.5 2 2.5 Collector-emitter voltage, V Fig. 3 Typical output characteristics 400 Conditions 900V ce 350 T = 125° 2.2Ω ...
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... T case 200 g(min) 2.5 3.0 3 (V) F Fig. 8 Reverse bias safe operating area 100 10 1 0.1 2000 1600 0.001 - (V) R DIM800DDM17-A000 Chip Module = 125˚C = ±15V = 2.2Ω 400 800 1200 1600 Collector-emitter voltage (V) ce Transistor IGBT R (˚C/KW) 0.56 4.00 5.64 i (ms) 0.12 3.89 47.15 ...
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... DIM800DDM17-A000 1400 1200 1000 800 600 400 200 Case temperature, T Fig current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 100 120 140 - (˚C) case www.dynexsemi.com ...
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... Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 11 140 Nominal weight: 1050g Module outline type code: D DIM800DDM17-A000 6x Ø7 9/10 ...
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... HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services ...