DIM100PHM33-F000 Dynex Semiconductor, DIM100PHM33-F000 Datasheet - Page 7

• Manufacturer Part Number: DIM100PHM33-F000
• Description: Igbt Modules - 3300v Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
160
140
120
100
225
200
175
150
125
100
80
60
40
20
25
75
50
0
0
1.0
0
Fig. 9 Diode reverse bias safe operating area
Fig. 7 Diode typical forward characteristics
500
T
1.5
T
j
j
= 25˚C
= 125˚C
2.0
1000
Reverse voltage, V
2.5
1500
3.0
2000
R
3.5
- (V)
2500
4.0
T
3000
j
= 125˚C
4.5
3500
5.0
1000
100
10
0.001
1
Fig. 8 Reverse bias safe operating area
Fig. 10 Transient thermal impedance
0.01
Pulse width, t
DIM100PHM33-F000
0.1
p
- (s)
1
Transistor
Diode
10
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