NUS2045MN ON Semiconductor, NUS2045MN Datasheet - Page 7

• Manufacturer Part Number: NUS2045MN
• Description: Overvoltage Protection Ic With Integrated Mosfet
• Manufacturer: ON Semiconductor

100000
10000
1000
100
12
10
11
9
8
7
6
5
4
3
2
1
0
0
−10V
5
V
Figure 6. Drain−to−Source Leakage Current
0.4
−V
GS
−V
Figure 4. On−Region Characteristics
DS
= 0 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.8
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
1.2
−4.5 V
−5 V
1.6
15
vs. Voltage
−5.5 V
T
−6 V
T
T
−4.2 V
J
J
J
= 25°C
= 150°C
= 100°C
2
−8 V
2.4
20
TYPICAL PERFORMANCE CURVES
2.8
NUS2045MN, NUS3045MN
(T
30 V, P−CHANNEL MOSFET
A
3.2
= 25°C, unless otherwise specified)
25
http://onsemi.com
−3.8 V
−3.6 V
−3.4 V
−3.2 V
3.6
−3 V
−4 V
4
30
7
0.2
0.1
0.1
10
0
1
0.3
2
Figure 7. Diode Forward Voltage vs. Current
Figure 5. On−Resistance vs. Gate−to−Source
V
GS
−V
0.4
3
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−V
0.5
T
GS,
4
J
= 150°C
GATE VOLTAGE (VOLTS)
0.6
5
Voltage
0.7
6
0.8
7
T
J
= −55°C
0.9
T
8
J
T
T
I
= 25°C
D
J
J
= 100°C
= −3.7 A
= 25°C
1.0
9
1.1
10