Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation (Note 3) @ T
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Storage Time
Fall Time
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS31306 Rev. 3 - 2
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
2DA1213O
2DA1213Y
2DA1213O, 2DA1213Y
Characteristic
@T
A
= 25°C
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
h
CBO
EBO
t
f
A
t
obo
on
t
FE
T
s
f
= 25°C
www.diodes.com
Min
120
-50
-50
70
20
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1 of 4
Symbol
Typ
160
130
17
25
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
V
V
T
Symbol
CBO
CEO
EBO
I
I
C
B
J
R
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, T
P
θ JA
D
STG
Max
-0.1
-0.1
-0.5
-1.2
140
240
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Schematic and Pin Configuration
PNP SURFACE MOUNT TRANSISTOR
MHz
Unit
μA
μA
pF
⎯
⎯
⎯
ns
ns
ns
V
V
V
V
V
-55 to +150
SOT89-3L
Value
Value
-0.4
125
-50
-50
-5
-2
1
I
I
I
V
V
I
I
V
V
V
V
V
V
I
C
C
E
C
C
B1
2DA1213O/Y
CB
EB
CE
CE
CE
CE
CB
CE
= -100μA, I
= -10mA, I
= -100μA, I
= -1A, I
= -1A, I
= -I
= -50V, I
= -5V, I
= -2V, I
= -2V, I
= -2V, I
= -2V, I
= -10V, I
= -2V, I
B2
1
= -50mA
B
B
= -50mA
= -50mA
C
C
C
C
C
C
Conditions
B
E
E
E
C
= 0
= -0.5A
= -0.5A
= -2A
= -100mA, f = 100MHz
= -1A,
2,4
= 0
= 0
= 0, f = 1MHz
= 0
= 0
3
© Diodes Incorporated
°C/W
Unit
Unit
°C
W
V
V
V
A
A
2DA1213O/Y