BU426 Bourns, Inc., BU426 Datasheet
BU426
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BU426 Summary of contents
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... AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING BU426 BU426A BU426 BU426A BU426 BU426A BU426, BU426A SOT-93 PACKAGE (TOP VIEW MDTRAAA SYMBOL VALUE UNIT 800 V V CBO ...
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... BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter 100 mA CEO(sus) C sustaining voltage V = 800 V CE Collector-emitter V = 900 CES cut-off current V = 800 900 V CE Emitter cut-off EBO EB current Forward current ...
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... NPN SILICON POWER TRANSISTORS BD135 120 Ω 47 Ω 15 Ω 100 Ω 82 Ω BD136 90 10% B 10 10% BU426, BU426A µ 680 F 100 Ω 250 V µ 100 F TUT µ 680 ≥ 2 A/µ B(on) ...
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... BU426, BU426A NPN SILICON POWER TRANSISTORS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 10 1·0 0·1 1· Collector Current - A C Figure 3. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 0·5 1· Base Current - A B Figure 5. 4 TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE ...
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... AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 0.2 µ 0.5 µ µ µ µ µ BU426 p DC Operation BU426A 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 7. BU426, BU426A SAP741AA 1000 5 ...