BCY59 Central Semiconductor Corp., BCY59 Datasheet
BCY59
Manufacturer Part Number
BCY59
Description
Npn Silicon Transistor
Manufacturer
Central Semiconductor Corp.
Datasheet
1.BCY59.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCY59
Manufacturer:
ST/MOTO
Quantity:
20 000
Company:
Part Number:
BCY592
Manufacturer:
PHILIPS
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Part Number:
BCY59CPL
Manufacturer:
FITIPOWER
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Part Number:
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Manufacturer:
ST
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DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (T A =25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Base Current (Peak)
Power Dissipation
Power Dissipation(T C =25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
I EBO
BV CBO
BV CBO
BV CEO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
SYMBOL
h FE
h FE
h FE
h FE
TEST CONDITIONS
V CB = Rated V CBO
V CB = Rated V CBO , T A =150°C
V EB =5.0V
I C =10µA (BCY58)
I C =10µA (BCY59)
I C =2.0mA (BCY58)
I C =2.0mA (BCY59)
I E =1.0µA
I C =10mA, I B =250µA
I C =100mA, I B =2.5mA
I C =10mA, I B =250µA
I C =100mA, I B =2.5mA
TEST CONDITIONS
V CE =5.0V, I C =10µA
V CE =5.0V, I C =2.0mA
V CE =1.0V, I C =10mA
V CE =1.0V, I C =100mA
SYMBOL
MIN
120
T J ,T stg
BCY58-VII
BCY59-VII
80
40
(SEE REVERSE SIDE)
V CBO
V CEO
V EBO
I C
I CM
I BM
P D
P D
JA
JC
20 TYP
MAX
220
MIN
180
120
BCY58-VIII
BCY59-VIII
20
45
BCY58
MAX
310
400
32
32
-65 to +200
NPN SILICON TRANSISTOR
250
MIN
MIN
160
32
45
32
45
7.0
0.60
0.75
100
200
200
340
450
150
BCY58-IX
BCY59-IX
40
60
7.0
1.0
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
JEDEC TO-18 CASE
BCY59
MAX
460
630
45
45
MAX
MIN
100
380
240
0.35
0.70
0.85
1.20
10
10
10
BCY58-X
BCY59-X
60
MAX
630
1000
DATA SHEET
UNITS
°C
°C/W
°C/W
UNITS
mA
mA
mA
mW
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
V
V
W
R1
Related parts for BCY59
BCY59 Summary of contents
Page 1
... DESCRIPTION The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications. MAXIMUM RATINGS (T A =25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ...
Page 2
... BCY58/BCY59 ELECTRICAL CHARACTERISTICS Continued SYMBOL TEST CONDITIONS =5.0V =10mA, f=100MHz =10V =0, f=1.0MHz =0.5V =0, f=1.0MHz =5.0V =200µ =2k , f=1.0kHz, B=200Hz =10V =10mA =-I B2 =1.0mA =10V =10mA =-I B2 =1.0mA =10V =10mA =- ...