BCW66F Infineon Technologies Corporation, BCW66F Datasheet
BCW66F
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BCW66F Summary of contents
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... NPN Silicon AF Transistors For general AF applications High current gain Low collector-emitter saturation voltage Complementary type: BCW68 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* * Shrinked chip version Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage ...
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Thermal Resistance Parameter 1) Junction - soldering point BCW66 BCW66K Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ ...
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Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA MHz C CE Collector-base capacitance MHz, BCW66 ...
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DC current gain BCW 65/ 100 ˚ ˚C -50 ˚ ...
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Transition frequency BCW 65/ MHz Total power dissipation P BCW66 BCW66K: ____ 550 mW ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...