NSL5TT1 ON Semiconductor, NSL5TT1 Datasheet - Page 2

• Manufacturer Part Number: NSL5TT1
• Description: High Current Surface Mount Pnp Silicon Switching Transistor For Load Management In Portable Applications
• Manufacturer: ON Semiconductor

1. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector−Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 1)
Collector −Emitter Saturation Voltage (Note 1)
Base −Emitter Saturation Voltage (Note 1)
Base −Emitter Turn−on Voltage (Note 1)
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
CB
CES
EB
= −0.01 mAdc, I
= −10 mAdc, I
= −0.01 mAdc, I
= −10 mA, V
= −150 mA, V
= −500 mA, V
= −50 mA, I
= −100 mA, I
= −250 mA, I
= −250 mA, I
= −500 mA, I
= −500 mA, I
= −1.0 A, I
= −150 mA, I
= −150 mA, V
= −4.0 Vdc)
= −5.0 Vdc, I
= −5.0 Vdc)
B
B
= −100 mA)
CE
B
B
B
B
B
B
= −0.5 mA)
CE
CE
CE
B
= −1.0 mA)
= −2.5 mA)
= −5.0 mA)
= −5.0 mA)
= −50 mA)
= −20 mA)
E
= −1.0 V)
= 0)
E
C
= 0)
= −2.0 V)
= −2.0 V)
= −3.0 V)
= 0)
= 0)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
I
BE(on)
h
CBO
EBO
CES
FE
−5.0
−4.0
Min
−10
100
100
100
−
−
−
−
−
−
−
−
−
−
−
−
Typical
−0.050
−0.080
−0.130
−0.110
−0.240
−0.180
−0.340
−0.03
−0.03
−0.01
−0.81
−0.81
−9.0
−7.0
−15
250
250
200
−0.875
Max
−0.1
−0.1
−0.1
−0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
V
V
V