MJB6488 ON Semiconductor, MJB6488 Datasheet - Page 3

• Manufacturer Part Number: MJB6488
• Description: Complementary Silicon Plastic Power Transistors
• Manufacturer: ON Semiconductor

+ 10 V
R
FOR PNP, REVERSE ALL POLARITIES.
D
0
DUTY CYCLE = 1.0%
B
1
5.0
2.0
1.0
0.5
0.2
0.1
20
10
1N5825 USED ABOVE I
MSD6100 USED BELOW I
AND R
0.07
0.05
0.03
0.02
0.01
MUST BE FAST RECOVERY TYPE, e.g.:
Figure 7. Active−Region Safe Operating Area
1.0
0.7
0.5
0.3
0.2
0.1
2.0
t
r
− 10 V
, t
0.01
T
f
CURVES APPLY BELOW RATED V
25 ms
v 10 ns
J
V
C
Figure 4. Switching Time Test Circuit
= 150 C
CE
VARIED TO OBTAIN DESIRED CURRENT LEVELS.
D = 0.5
, COLLECTOR−EMITTER VOLTAGE (V)
0.05
0.02
0.01
4.0
0.2
0.1
0.02
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
SINGLE PULSE
0.05
10
B
[ 100 mA
B
51
[ 100 mA
0.1
R
B
20
− 4 V
CEO
C
0.2
D
= 25 C
1
40
+ 30 V
V
CC
R
0.5
60
C
MJB6488, MJB6491
Figure 6. Thermal Response
SCOPE
dc
100 ms
500 ms
1.0 ms
5.0 ms
http://onsemi.com
80
1.0
2.0
t, TIME (ms)
3
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150 C. T
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
1000
There are two limitations on the power handling ability of
The data of Figure 7 is based on T
500
200
100
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
50
20
10
5.0
qJC
J(pk)
qJC
0.2
(t) = r(t) R
= 1.67 C/W MAX
− T
T
V
I
C
C
CC
/I
C
10
= 25 C
B
= P
= 30 V
= 10
J(pk)
(pk)
qJC
NPN
PNP
0.5
1
Z
20
I
qJC(t)
C
, COLLECTOR CURRENT (A)
may be calculated from the data in
Figure 5. Turn−On Time
1.0
50
P
(pk)
2.0
100
DUTY CYCLE, D = t
t
r
t
1
J(pk)
t
t
d
2
200
@ V
5.0
BE(off)
= 150 C; T
1
[ 5.0 V
/t
500
2
10
C
− V
1.0 k
J(pk)
C
CE
20
is