LMN200B02 Diodes, Inc., LMN200B02 Datasheet - Page 2

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LMN200B02

Manufacturer Part Number
LMN200B02
Description
200 Ma Load Switch Featuring Pre-biased Pnp Transistor And N-mosfet With Gate Pull Down Resistor
Manufacturer
Diodes, Inc.
Datasheet
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resestor (Q2)
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current
Drain-Source Voltage
Drain Gate Voltage (R
Gate-Source Voltage
Drain Current (Page 1: Note 3)
Continuous Source Current
DS30658 Rev. 6 - 2
Characteristic
GS
≤1MOhm)
Characteristic
Pulsed (tp <10 uS, Duty Cycle <1%)
Continuous (V
Continuous
Pulsed (tp<50 uS)
gs
= 10V)
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Symbol
V
V
V
V
CBO
CEO
I
C
cc
in
2 of 9
@T
A
Symbol
V
V
V
= 25°C unless otherwise specified
DGR
GSS
DSS
I
I
D
S
@T
+5 to -6
Value
-200
-50
-50
-50
A
= 25°C unless otherwise specified
Value
+/-20
+/-40
115
800
115
60
60
Unit
mA
© Diodes Incorporated
V
V
V
V
Unit
mA
mA
V
V
V
LMN200B02

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