MLD2N06CL ON Semiconductor, MLD2N06CL Datasheet

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MLD2N06CL

Manufacturer Part Number
MLD2N06CL
Description
Voltage Clamped Mosfet
Manufacturer
ON Semiconductor
Datasheet

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MLD2N06CL
SMARTDISCRETESt MOSFET
2 Amp, 62 Volts, Logic Level
N−Channel DPAK
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high in−rush current or a shorted load
condition could occur.
short circuit protection, integrated Gate−Source clamping for ESD
protection and integral Gate−Drain clamping for over−voltage
protection and SENSEFETt technology for low on−resistance. No
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kW gate pulldown resistor is recommended
to avoid a floating gate condition.
to be applied without use of external transient suppression
components. The Gate−Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the minimum recommended
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T
Total Power Dissipation @ T
Electrostatic Voltage
Operating & Storage Temperature Range
Maximum Junction Temperature
Thermal Resistance,
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 5 seconds
The MLD2N06CL is designed for applications that require a rugged
This Logic Level Power MOSFET features current limiting for
The internal Gate−Source and Gate−Drain clamps allow the device
Pb−Free Packages are Available
pad size.
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Rating
(T
GS
J
= 25°C unless otherwise noted)
C
= 1.0 MW)
Preferred Device
= 25°C
C
= 25°C
Symbol
T
T
V
V
R
ESD
R
R
V
J
J(max)
P
DGR
, T
T
DSS
I
qJC
qJA
qJA
GS
D
D
L
stg
Self−limited
−50 to 150
Clamped
Clamped
Value
3.12
71.4
±10
150
100
260
2.0
40
1
°C/W
Unit
Vdc
Vdc
Vdc
Adc
kV
°C
°C
°C
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MLD2N06CL
MLD2N06CLG
MLD2N06CLT4
MLD2N06CLT4G
1 2
62 V (Clamped)
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
3
Device
(BR)DSS
ORDERING INFORMATION
Y
WW
L2N06CL = Device Code
G
G
4
http://onsemi.com
CASE 369C
STYLE 2
DPAK
(Pb−Free)
(Pb−Free)
Package
N−Channel
R
R1
= Year
= Work Week
= Pb−Free Package
DPAK
DPAK
DPAK
DPAK
DS(on)
400 mW
Publication Order Number:
TYP
R2
2500 Tape & Reel
2500 Tape & Reel
75 Units/Rail
75 Units/Rail
D
MARKING
DIAGRAM
S
MLD2N06CL/D
Shipping
06CLG
YWW
I
D
L2N
2.0 A
MAX

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MLD2N06CL Summary of contents

Page 1

... SMARTDISCRETESt MOSFET 2 Amp, 62 Volts, Logic Level N−Channel DPAK The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in− ...

Page 2

... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. Output Characteristics MLD2N06CL (T = 25°C unless otherwise noted Vdc 1.0 Adc Vdc Vdc 1.0 Adc 5.0 Vdc 25W ...

Page 3

... MLD2N06CL SHORT CIRCUIT PROTECTION AND THE EFFECT OF TEMPERATURE The on−chip circuitry of the MLD2N06CL offers an integrated means of protecting the MOSFET component from high in−rush current or a shorted load. As shown in the schematic diagram, the current limiting feature is provided by an NPN transistor and integral resistors R1 and R2. R2 senses the current through the MOSFET and forward biases the NPN transistor’ ...

Page 4

... Figure 3. I Variation D(lim) With Temperature 0 0.5 0.4 0.3 0.2 0.1 0 −50 100 100 T , STARTING JUNCTION TEMPERATURE (°C) J Figure 6. Maximum Avalanche Energy versus Junction Temperature MLD2N06CL 1 0.8 0.6 0.4 0.2 0 100 150 Figure ...

Page 5

... Thermal Resistance − General Data and Its Use” provides detailed instructions. MAXIMUM DC VOLTAGE CONSIDERATIONS The maximum drain−to−source voltage that can be continuously applied across the MLD2N06CL when current limit is a function of the power that must be dissipated. This power is determined by the maximum current limit at maximum rated operating temperature 10 1 ...

Page 6

... To achieve high gate−to−drain clamp voltages, several voltage elements are strung together; the MLD2N06CL uses 8 such elements. Customarily, two voltage elements are used to provide a 14.4 volt gate−to−source voltage clamp. For the ...

Page 7

... V 0.035 0.050 0.89 Z 0.155 −−− 3.93 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 6.172 0.243 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MLD2N06CL/D MAX 6.22 6.73 2.38 0.88 0.58 1.14 1.01 0.58 2.89 5.45 1.01 −−− 1.27 −−− ...

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