ALD110814 Advanced Linear Devices Inc (ALD), ALD110814 Datasheet

ALD110814

Manufacturer Part Number

ALD110814

Description

Quad/dual N-channel Enhancement Mode Epad Matched Pair Mosfet Array

Manufacturer

Advanced Linear Devices Inc (ALD)

Datasheet

1.ALD110814.pdf (2 pages)

Available stocks

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Part Number

Manufacturer

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Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ALD110814PCL

Manufacturer:

Advanced Linear Devices Inc

Quantity:

135

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GENERAL DESCRIPTION

ALD110814/ALD110914 are monolithic quad/dual N-Channel MOSFETs

matched at the factory using ALD’s proven EPAD® CMOS technology.

These devices are intended for low voltage, small signal applications.

The ALD110814/ALD110914 MOSFETs are designed and built with ex-

ceptional device electrical characteristics matching. Since these devices

are on the same monolithic chip, they also exhibit excellent tempco track-

ing characteristics. Each device is versatile as a circuit element and is a

useful design component for a broad range of analog applications. They

are basic building blocks for current sources, differential amplifier input

stages, transmission gates, and multiplexer applications. For most appli-

cations, connect V- and N/C pins to the most negative voltage potential in

the system and V+ pin to the most positive voltage potential (or left open

unused). All other pins must have voltages within these voltage limits.

The ALD110814/ALD110914 devices are built for minimum offset voltage

and differential thermal response, and they are designed for switching

and amplifying applications in +1.5V to +10V systems where low input

bias current, low input capacitance and fast switching speed are desired.

Since these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment.

The ALD110814/ALD110914 are suitable for use in precision applications

which require very high current gain, beta, such as current mirrors and

current sources. The high input impedance and the high DC current gain

of the Field Effect Transistors result in extremely low current loss through

the control gate. The DC current gain is limited by the gate input leakage

current, which is specified at 30pA at room temperature. For example, DC

beta of the device at a drain current of 3mA and input leakage current of

30pA at 25 C is = 3mA/30pA = 100,000,000.

ORDERING INFORMATION

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +1.4V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Parallel connection of MOSFETs to increase drain currents

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.

ALD110814PCL

16-Pin

Plastic Dip

Package

GS(th)

0 C to +70 C

match to 10mV

INEAR

DVANCED

EVICES,

ALD110814SCL

Operating Temperature Range*

Package

16-Pin

SOIC

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

NC.

GS(th)

typical

ALD110914PAL ALD110914SAL

temperature coefficient

Plastic Dip

Package

8-Pin

0 C to +70 C

MATCHED PAIR MOSFET ARRAY

SOIC

Package

8Pin

www.aldinc.com

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stages

• Discrete voltage comparators

• Voltage bias circuits

• Sample and Hold circuits

• Analog inverters

• Level shifters

• Source followers and buffers

• Current multipliers

• Discrete analog multiplexers/matrices

• Discrete analog switches

PIN CONFIGURATION

N/C*

*N/C pins are internally connected.

Connect to V- to reduce noise

V -

PAL, SAL PACKAGES

PCL, SCL PACKAGES

M 1

M 4

ALD110914

ALD110814

M 1

ALD110814/ALD110914

M 3

M 2

V -

GS(th)

N/C*

V -

N/C*

= +1.4V

EPAD

Related parts for ALD110814

ALD110814 Summary of contents

Page 1

... V+ pin to the most positive voltage potential (or left open unused). All other pins must have voltages within these voltage limits. The ALD110814/ALD110914 devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +1 ...

Page 2

... Drain Source Leakage Current Gate Leakage Current 1 I GSS Input Capacitance C ISS Transfer Reverse Capacitance C RSS Turn-on Delay Time t on Turn-off Delay Time t off Crosstalk Notes: Consists of junction leakage currents 1 ALD110814/ALD110914 unless otherwise specified ALD110814 / ALD110914 Min Typ 1.38 1. -1.7 0.0 +1.6 12.0 3.0 1.4 1.8 68 500 0.5 10 ...

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