NTNKE4891N ON Semiconductor, NTNKE4891N Datasheet - Page 3
NTNKE4891N
Manufacturer Part Number
NTNKE4891N
Description
Ntmke4891n Power Mosfet
Manufacturer
ON Semiconductor
Datasheet
1.NTNKE4891N.pdf
(5 pages)
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
140
120
100
80
60
40
20
0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
−50
3
Figure 3. On−Resistance vs. Gate−to−Source
0.5
I
V
D
Figure 5. On−Resistance Variation with
GS
Figure 1. On−Region Characteristics
= 29 A
−25
V
= 10 V
DS
4
V
1
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, GATE−TO−SOURCE VOLTAGE (V)
3.8 V
, JUNCTION TEMPERATURE (°C)
4.5 V − 4.2 V
1.5
0
10 V − 6.5 V
5
Temperature
2
25
Voltage
6
2.5
50
3
7
75
3.5
TYPICAL CHARACTERISTICS
8
100
4
T
I
T
D
J
J
= 25°C
= 29 A
= 25°C
http://onsemi.com
4.5
9
3.4 V
3.2 V
2.8 V
125
3.6 V
3.0 V
5
10
150
3
1.0E−10
1.0E−5
1.0E−6
1.0E−7
1.0E−8
1.0E−9
0.0050
0.0040
0.0030
0.0020
0.0010
200
180
160
140
120
100
80
60
40
20
0
1
0
5
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
DS
J
GS
20
= 25°C
1.5
≥ 10 V
= 0 V
V
V
Figure 2. Transfer Characteristics
DS
GS
40
T
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
J
10
2
= 25°C
I
60
D
T
, DRAIN CURRENT (A)
J
2.5
= 125°C
Gate Voltage
80
vs. Voltage
V
V
GS
GS
T
T
T
J
J
J
100
= 4.5 V
= 10 V
= 25°C
15
= 150°C
= 125°C
3
T
120
J
= −55°C
3.5
140
20
4
160
4.5
180
200
25
5