RM25 EIC Semiconductor Incorporated, RM25 Datasheet

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RM25

Manufacturer Part Number
RM25
Description
Avalanche Diode
Manufacturer
EIC Semiconductor Incorporated
Datasheet
1.RM25.pdf (1 pages)

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Rating at 25 C ambient temperature unless otherwise specified.
For capacitive load, derate current by 20%.
Page 1 of 1
V
I
FEATURES :
MECHANICAL DATA :
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RM25
* Excellent clamping capability
* Low zener impedance
* Fast response time : typically less
* Pb / RoHS Free
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
ZSM
Working Peak Reverse Voltage
Allowable Avalanche Current, Rectangular wave Single Shot
Instantaneous Avalanche Voltage at I
Maximum Reverse Leakage at Working Peak Reverse Voltage
Maximum Equivalent Resistance of Breakdown region
at I
Temperature Coefficient at I
Junction Temperature Range
Storage Temperature Range
RM
Z
= 0.5 to 1.5 A
: 40 Volts
: 3.0 Amp. ( 10 ms )
Method 208 guaranteed
Z
RATING
= 1mA
Z
= 1 mA
Dimensions in inches and ( millimeters )
SYMBOL
AVALANCHE DIODE
V
T
I
I
R(H)
ZSM
V
R
RWM
T
I
STG
R
Z
Z
Z
J
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
D2
- 40 to + 130
- 40 to + 130
3.0 (10ms)
50 to 61.5
VALUE
0.09
5.0
40
50
5
Rev. 02 : March 25, 2005
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
1.00 (25.4)
MIN.
MIN.
UNIT
%/ºC
V
A
V
Ω
C
C
A

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