SQM110N04-02L Vishay, SQM110N04-02L Datasheet - Page 3

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SQM110N04-02L

Manufacturer Part Number
SQM110N04-02L
Description
N-channel 40 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet
TYPICAL CHARACTERISTICS T
Document Number: 64731
S09-1070-Rev. A, 15-Jun-09
12 000
10 000
8000
6000
4000
2000
300
250
200
150
100
250
200
150
100
50
50
0
0
0
0
0
0
C
rss
20
V
GS
2
8
V
V
DS
DS
= 10 thru 5 V
Output Characteristics
C
oss
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
40
I
D
Capacitance
- Drain Current (A)
16
4
60
C
iss
24
6
T
C
80
= - 55 °C
A
32
8
= 25 °C, unless otherwise noted
100
125 °C
25 °C
4 V
3 V
120
10
40
0.004
0.003
0.002
0.001
0.000
250
200
150
100
50
20
16
12
0
8
4
0
0
0
0
V
I
D
V
DS
GS
= 110 A
20
On-Resistance vs. Drain Current
= 30 V
60
= 4.5 V
1
V
GS
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
I
40
D
SQM110N04-02L
- Drain Current (A)
120
Gate Charge
2
V
GS
25 °C
T
60
Vishay Siliconix
C
= 10 V
= 125 °C
180
3
80
www.vishay.com
240
- 55 °C
4
100
300
120
5
3

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