SQ2308ES Vishay, SQ2308ES Datasheet
SQ2308ES
Available stocks
Related parts for SQ2308ES
SQ2308ES Summary of contents
Page 1
... GS I (A) D Configuration TO-236 (SOT-23 Top View SQ2308ES (A8)* * Marking Code ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current Continuous Source Current (Diode Conduction) b Pulsed Drain Current Single Pulse Avalanche Current ...
Page 2
... SQ2308ES Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... S09-1700-Rev. A, 07-Sep- °C, unless otherwise noted 100 125 150 SQ2308ES Vishay Siliconix ° 125 ° ° 0.0 0.7 1.4 2.1 2 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
Page 4
... SQ2308ES Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted A 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note The characteristics shown in the graph. Normalized Transient Thermal Impedance Junction to Foot (25 °C) is given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" ...
Page 5
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...