SQ4850EY Vishay, SQ4850EY Datasheet - Page 3

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SQ4850EY

Manufacturer Part Number
SQ4850EY
Description
N-channel 60 V D-s 175 ?c Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
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SQ4850EY-T1-GE3
Manufacturer:
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Quantity:
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SQ4850EY-T1-GE3
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Part Number:
SQ4850EY-T1_GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
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Quantity:
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TYPICAL CHARACTERISTICS T
Document Number: 68878
S-Pending-Rev. A, 23-Oct-08
1400
1200
1000
300
250
200
150
100
800
600
400
200
40
32
24
16
50
8
0
0
0
0.0
0
0
C
rss
Graph to be available
0.5
20
10
upon completion
V
V
DS
DS
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
I
Transconductance
1.0
D
40
20
V
of testing
Capacitance
GS
- Drain Current (A)
C
C
oss
= 10 thru 5 V
iss
1.5
60
30
2.0
40
80
A
4 V
3 V
= 25 °C, unless otherwise noted
100
2.5
50
120
3.0
60
0.06
0.05
0.04
0.03
0.02
0.01
0.00
40
32
24
16
10
8
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 6.0 A
On-Resistance vs. Drain Current
= 30 V
1
8
4
V
GS
Transfer Characteristics
Q
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
V
I
D
GS
- Drain Current (A)
Gate Charge
16
2
8
= 4.5 V
25 °C
T
C
Vishay Siliconix
= 150 °C
12
24
3
SQ4850EY
V
GS
www.vishay.com
= 10 V
- 55 °C
32
16
4
40
20
5
3

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