SQ4410EY Vishay, SQ4410EY Datasheet
SQ4410EY
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SQ4410EY Summary of contents
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... 0 ° 125 ° stg SYMBOL c PCB Mount R thJA R thJF SQ4410EY Vishay Siliconix ® Power MOSFET d Product Requirements at: LIMIT UNIT 30 V ± 7 2 175 °C LIMIT UNIT 50 ° ...
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... SQ4410EY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... On-Resistance vs. Junction Temperature Document Number: 65674 S09-2623-Rev. A, 21-Dec- °C, unless otherwise noted 125 ° 0.001 100 125 150 175 SQ4410EY Vishay Siliconix ° 125 ° Gate-to-Source Voltage (V) ...
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... SQ4410EY Vishay Siliconix TYPICAL CHARACTERISTICS T 0.15 0.12 0.09 0.06 0.03 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A 0.6 0.3 - 0 125 ° 0 ° 1 100 T - Junction Temperature (°C) ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65674. Document Number: 65674 S09-2623-Rev. A, 21-Dec- Square Wave Pulse Duration (s) SQ4410EY Vishay Siliconix 150 °C A www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...