SQD35N05-26L Vishay, SQD35N05-26L Datasheet - Page 4

• Manufacturer Part Number: SQD35N05-26L
• Description: N-channel 55 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

SQD35N05-26L
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.05
0.04
0.03
0.02
0.01
0.00
2.0
1.6
1.2
0.8
0.4
0.0
- 50
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
V
I
- 25
D
GS
= 20 A
= 10 V
2
0
V
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
4
50
I
D
= 10.5 A
75
6
100
A
125
= 25 °C, unless otherwise noted
8
150
175
10
100
10
56
52
48
44
40
- 50
1
0
- 25
Source Drain Diode Forward Voltage
Graph to be available
0.2
upon completion
0
V
T
SD
Drain Source Breakdown
vs. Junction Temperature
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
T
0.4
25
J
of testing
= 175 °C
50
0.6
75
S-Pending-Rev. A, 23-Oct-08
Document Number: 68839
0.8
100
125
T
J
= 25 °C
1.0
150
175
1.2