SQD50P04 Vishay, SQD50P04 Datasheet
SQD50P04
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SQD50P04 Summary of contents
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... 0 ° ° stg SYMBOL c PCB Mount R thJA R thJC SQD50P04-13L Vishay Siliconix ® Power MOSFET d www.vishay.com/applications LIMIT UNIT - 40 V ± 100 136 175 °C LIMIT UNIT 55 °C/W 1 ...
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... SQD50P04-13L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Gate-to-Source Voltage (V) GS Transconductance Document Number: 65157 S09-1315-Rev. A, 13-Jul- °C, unless otherwise noted A 100 100 ° °C 125 °C 80 100 SQD50P04-13L Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) ...
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... SQD50P04-13L Vishay Siliconix THERMAL RATINGS °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Note The characteristics shown in the graph. Normalized Transient Thermal Impedance Junction to Ambient (25 °C) is given for general guidelines only to enable the user to get a “ball park” ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...