SQD300BA60 Sanrex Corp., SQD300BA60 Datasheet

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SQD300BA60

Manufacturer Part Number
SQD300BA60
Description
Transistor Module
Manufacturer
Sanrex Corp.
Datasheet

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SanRex
SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH h
speed, high power Darlington transistor. The transistor has a reverse paralleled fast
recovery diode (trr:200ns). The mounting base of the module is electrically isolated
from semiconductor elements for simple heatsink construction,
■Maximum Ratings
■Electrical Characteristics
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
V
Rth ( j-c)
(Applications)
V
Symbol
Symbol
V
V
I
Low saturation voltage for higher efficiency.
ULITRA HIGH DC current gain h
Isolated mounting base
V
Motor Control(VVVF) , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
CEO (SUS)
CEX (SUS)
C
V
V
V
V
Tstg
CE (sat)
BE (sat)
−I
V
I
I
EBO
h
ton
CBO
=300A, V
EBO
P
trr
CBO
CEX
EBO
I
I
T
ts
ECO
tf
ISO
TRANSISTOR MODULE
SQD300BA60
C
B
FE
T
j
C
10V for faster switching speed.
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning
Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Switching
Time
Collector-Emitter Reverse Voltage
Reverse Recovery time
Thermal Impedance
(junction to case)
CEX
®
=600V
Item
Item
On Time
Storage Time
Fall Time
Terminal (M6)
Terminal (M4)
FE
(M6)
. h
FE
≧750
( )=pw≦1ms
V
T
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.0-1.4(10-14)
Typical Value
V
V
Ic=1A
Ic=60A,I
Ic=300A,V
Ic=300A,I
Ic=300A,I
Vcc=300V,Ic=300A
I
Ic=−300A
Vcc=300V, Ic=−300A, −di/dt=300A/μs, V
Transistor part
Diode part
B1
C
BE
CB
EB
=25℃
=0.6A,I
=−2V
=V
=V
(Hi-β)
EBO
CBO
B2
B
B
B2
=−10A
CE
EX
=400mA
=400mA
=−6A
BX
=2.5V
B
Conditions
Conditions
E
FE
, high
C
BE
=−5V
(Tj=25℃ unless otherwise specified)
×7.5
2-M4
Min.
450
600
750
EX
11.013.0
2-M6
×13
SQD300BA60
−40 to +150
−40 to +125
BX
300(600)
4.7(48)
4.7(48)
1.5(15)
B
Ratings
Ratings
21.0
1380
2500
Typ.
108max
93±0.5
200
600
600
300
460
10
18
E
29.0
Max.
1200
UL;E76102 ( M)
C
4.0
2.5
3.0
2.0
8.0
2.0
1.8
0.09
0.3
Unit:A
(㎏f・B)
℃/W
N・m
4- φ6.5
Unit
Unit
mA
mA
μs
ns
W
A
A
A
V
V
V
V
g
V
V
V
V

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SQD300BA60 Summary of contents

Page 1

... TRANSISTOR MODULE SQD300BA60 SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH h speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr:200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, = ...

Page 2

... Qrr − 2 1 0 trr − 1 10 5 5 2 4 0 0 6 0 0 5 SQD300BA60 ts tf ton 1 0 0 2 0 0 Collector Current Ic (A) =−10A B2 Tj=125℃ 1 0 0 ...

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