SQD400AA120 Sanrex Corp., SQD400AA120 Datasheet
SQD400AA120
Manufacturer Part Number
SQD400AA120
Description
Transistor Module
Manufacturer
Sanrex Corp.
Datasheet
1.SQD400AA120.pdf
(2 pages)
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Part Number:
SQD400AA120
Manufacturer:
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Quantity:
1 000
Part Number:
SQD400AA120
Manufacturer:
SANREX
Quantity:
20 000
Part Number:
SQD400AA120
Quantity:
60
SanRex
SQD400AA120 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The
mounting base of the module is electrically isolated from Semiconductor elements for
simple heatsink construction.
■Maximum Ratings
■Electrical Characteristics
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
●
●
●
●
V
Rth （ j-c）
（Applications）
Symbol
Symbol
V
V
CEX （SUS）
I
Low saturation voltage for higher efficiency
High DC current gain.
Isolated monuting base
Motor Control（VVVF） , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
C
V
V
V
V
Tstg
CE （sat）
BE （sat）
−I
V
I
I
h
ton
CBO
=400A, V
EBO
P
CBO
CEX
EBO
I
I
T
ts
ECO
tf
ISO
TRANSISTOR MODULE
SQD400AA120
C
B
FE
T
j
C
Emitterr-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Sustaning Voltage
Collector Current
Reverse Collector Current
Base Current
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting Torque
Mass
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Sturation Voltage
Base-Emitter Saturation Voltage
Switching Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
CEX
=1200V
®
Item
Item
Mouting （M6）
Terminal （ M8）
Terminal （ M4）
Storage Time
Fall Time
On Time
V
I
T
A.C. 1minute
Recommended Value 2.5-3.9（25-40）
Recommended Value 8.8-10 （90-105）
Recommended Value 1.0-1.4（10-14）
Typical Value
V
V
Ic＝400A，V
Ic＝400A，V
Ic＝400A，I
Ic＝400A，I
Vcc＝600V，Ic＝400A
I
Ic＝−400A
Transistor part
Diode part
C
B1
C
BE
CB
EB
＝80A，I
＝25℃
＝8A，I
＝−2V
＝10V
＝1200V
B2
B2
B
B
＝−8A
＝−18A
CE
CE
＝8A
＝8A
EX
＝2.8V
＝5V
BX
Conditions
Conditions
B
E
C
（Tj＝25℃ unless otherwise specified）
3-M4
Min.
100
SQD400AA120
−40 to ＋150
−40 to ＋125
75
21.5
11（115）
4.7（48）
1.5（15）
Ratings
Ratings
BX
1200
1200
1200
3120
2500
400
400
670
23.0
20
113max.
10
93±0.2
E
29.0
1000
Max
5.00
17.0
0.16
0.04
3.0
3.5
3.0
3.0
1.8
UL;E76102 （ M）
C
29.5
Unit：A
(㎏f･B)
℃/W
N･m
2-M8
Unit
Unit
mA
mA
μs
4- φ6.5
℃
℃
W
A
A
A
V
V
V
V
V
g
V
V
V
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SQD400AA120 Summary of contents
Page 1
... TRANSISTOR MODULE SQD400AA120 SQD400AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for simple heatsink construction. ● I =400A, V =1200V ...
Page 2
... I ＝8. ＝−8.0A B2 ５ V ＝600V CC Tj＝25℃ ４ ０ ０ ３ ０ ０ ３ ５ ０ SQD400AA120 V （sat） （sat） CE １ ２ ２ ５ １ ０ ２ ５ １ ０ Collector Current Ic （A） ...