SQJ461EP Vishay, SQJ461EP Datasheet
SQJ461EP
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SQJ461EP Summary of contents
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... 0 ° ° stg e, f SYMBOL c PCB Mount R thJA R thJC SQJ461EP Vishay Siliconix Power MOSFET d Requirements at: LIMIT UNIT - 60 V ± 8.6 - 6 125 mJ 1 175 °C 260 LIMIT UNIT 65 °C/W 1.3 www.vishay.com ...
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... SQJ461EP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 0.05 0.04 0. 125 °C C 0.02 0.01 0. 100 10 0.1 0.01 0.001 100 125 150 175 SQJ461EP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQJ461EP Vishay Siliconix TYPICAL CHARACTERISTICS T 0.10 0.08 0.06 0. 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com °C, unless otherwise noted A 1.1 0.8 0.5 0.2 - 0 100 125 T - Junction Temperature (°C) J On-Resistance vs ...
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... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65541. Document Number: 65541 S09-2183-Rev. A, 26-Oct- Square Wave Pulse Duration (s) SQJ461EP Vishay Siliconix www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...