SQJ463EP Vishay, SQJ463EP Datasheet
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SQJ463EP
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SQJ463EP Summary of contents
Page 1
... 0 ° ° stg e, f SYMBOL c PCB Mount R thJA R thJC SQJ463EP Vishay Siliconix Power MOSFET d Requirements at: LIMIT UNIT - 40 V ± 11.0 - 6 125 mJ 1 175 °C 260 LIMIT UNIT 65 °C/W 1.3 www.vishay.com ...
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... SQJ463EP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted C PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 0.05 0. 125 °C 0.03 C 0.02 0.01 0. 100 10 0.1 0.01 0.001 100 125 150 175 SQJ463EP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SQJ463EP Vishay Siliconix TYPICAL CHARACTERISTICS T 0.10 0.08 0.06 0. 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage THERMAL RATINGS °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the graph. Normalized Transient Thermal Impedance Junction to Case (25 ° ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...