SQJ844EP Vishay, SQJ844EP Datasheet - Page 3

• Manufacturer Part Number: SQJ844EP
• Description: Dual N-channel 30 V D-s 175 ?c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 65530
S09-2106-Rev. A, 19-Oct-09
2.0
1.7
1.4
1.1
0.8
0.5
50
40
30
20
10
30
24
18
12
0
6
0
- 50
0
0
T
C
On-Resistance vs. Junction Temperature
- 25
= 25 °C
I
D
= 14 A
T
3
C
2
V
0
= - 55 °C
DS
T
Output Characteristics
T
J
C
V
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
GS
= 125 °C
Transconductance
25
I
6
D
= 10 V thru 5 V
- Drain Current (A)
4
50
9
V
75
V
GS
GS
6
= 4 V
= 10 V
100
12
A
V
GS
125
= 25 °C, unless otherwise noted
8
= 3 V
15
150
175
18
10
0.001
0.10
0.08
0.06
0.04
0.02
0.00
0.01
100
50
40
30
20
10
0.1
10
0
1
0.0
0
0
V
GS
Source Drain Diode Forward Voltage
= 4.5 V
0.2
1
On-Resistance vs. Drain Current
10
V
V
T
SD
GS
Transfer Characteristics
C
T
J
- Source-to-Drain Voltage (V)
= 125 °C
- Gate-to-Source Voltage (V)
0.4
T
I
= 150 °C
2
D
C
- Drain Current (A)
= 25 °C
20
0.6
3
V
GS
30
Vishay Siliconix
T
= 10 V
C
0.8
= - 55 °C
4
SQJ844EP
T
J
= 25 °C
40
1.0
www.vishay.com
5
1.2
50
6
3