SQJ412EP Vishay, SQJ412EP Datasheet - Page 4

• Manufacturer Part Number: SQJ412EP
• Manufacturer: Vishay

SQJ412EP
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
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4
0.05
0.04
0.03
0.02
0.01
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
- 25
= 15 A
2
0
V
T
GS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
T
J
= 25 °C
4
50
75
6
V
100
GS
50
48
46
44
42
40
A
Drain Source Breakdown vs. Junction Temperature
- 50
= 25 °C, unless otherwise noted)
= 10 V
V
T
125
GS
J
= 150 °C
8
- 25
= 4.5 V
150
I
D
0
= 1 mA
T
175
10
J
- Junction Temperature (°C)
25
50
75
100
0.001
- 0.3
- 0.7
- 1.1
- 1.5
0.01
100
0.1
0.5
0.1
10
125
1
- 50
0.0
150
- 25
Source Drain Diode Forward Voltage
0.2
T
J
175
= 150 °C
V
0
SD
- Source-to-Drain Voltage (V)
0.4
25
T
Threshold Voltage
J
- Temperature (°C)
50
0.6
S10-1746-Rev. A, 02-Aug-10
75
T
Document Number: 65935
J
I
D
= 25 °C
0.8
= 250 μA
100
125
I
D
1.0
= 5 mA
150
1.2
175