SQJ980EP Vishay, SQJ980EP Datasheet - Page 4

• Manufacturer Part Number: SQJ980EP
• Description: Automotive Dual N-channel 75 V D-s 175 °c Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS (T
S11-2419-Rev. B, 19-Dec-11
0.001
0.01
100
- 0.3
- 0.7
- 1.1
- 1.5
0.1
10
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.5
0.1
10
1
8
6
4
2
0
0.0
- 50 - 25
0
Source Drain Diode Forward Voltage
I
V
D
0.2
DS
= 9.7 A
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3
= 35 V
V
T
0
SD
J
= 150 °C
Q
- Source-to-Drain Voltage (V)
g
Threshold Voltage
0.4
T
25
- Total Gate Charge (nC)
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Temperature (°C)
Gate Charge
6
50
0.6
I
D
75
= 250 μA
9
T
0.8
100
J
= 25 °C
125
A
I
D
12
= 25 °C, unless otherwise noted)
1.0
= 5 mA
150
1.2
175
15
4
0.25
0.20
0.15
0.10
0.05
0.00
100
2.5
2.1
1.7
1.3
0.9
0.5
Drain Source Breakdown vs. Junction Temperature
96
92
88
84
80
- 50 - 25
- 50 - 25
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
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I
D
= 20 A
I
D
= 1 mA
2
V
0
0
T
GS
T
J
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
25
T
J
= 25 °C
4
50
50
75
75
V
GS
6
= 10 V
100
Vishay Siliconix
100
Document Number: 67015
T
J
SQJ980EP
125
125
= 125 °C
V
8
GS
= 4.5 V
150
150
175
175
10