RT3WLMM ISAHAYA ELECTRONICS CORPORRATION, RT3WLMM Datasheet - Page 2

• Manufacturer Part Number: RT3WLMM
• Description: Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25℃)
V
I
I
h
h
V
f
C
NF
T
CBO
EBO
* : It shows h
FE
FE
Symbol
(BR)CEO
CE(sat)
ob
*
FE
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
classification in right table.
Parameter
ISAHAYA ELECTRONICS CORPORATION
I
V
V
V
V
I
V
(Tr1) V
(Tr2) V
(Tr1) V
(Tr2) V
C
C
CB
EB
CE
CE
CE
=100μA,R
=100mA,I
=6V,I
=6V,I
=6V,I
=6V,I
=50V,I
CE
CE
CB
CB
=6V,I
=-6V,I
=6V,I
=-6V,I
C
C
C
E
=0
=1mA
=0.1mA
=-10mA
E
B
Test conditions
=0
BE
E
=10mA
E
=-0.1mA,f=1kH
=0.3mA,f=100H
E
=∞
E
=0,f=1MH
=0,f=1MH
Z
Z
Z
,R
Z
,R
G
=2kΩ
G
=10kΩ
For Low Frequency Amplify Application
Item
hFE
Min
150
50
90
-
-
-
-
-
-
RT3WLMM
Silicon Epitaxial Type
Composite Transistor
150～300
Limits
Typ
200
2.5
4.0
E
-
-
-
-
-
-
-
-
Max
500
0.1
0.1
0.3
15
20
250～500
-
-
-
F
MH
Unit
μA
μA
pF
dB
V
V
-
-
Z