TCZT8020 Vishay, TCZT8020 Datasheet - Page 2

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TCZT8020

Manufacturer Part Number
TCZT8020
Description
Matched Pairs Of Emitters And Detectors
Manufacturer
Vishay
Datasheet

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TCZT8020
Vishay Semiconductors
Output (Detector)
CTR
Electrical Characteristics
T
Coupler
1)
with parallel alignment within 5°
Input (Emitter)
www.vishay.com
2
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
I
Collector current
I
Collector emitter saturation
voltage
Cut-off frequency
Forward voltage
Radiant intensity
Peak wavelength
Virtual source diameter
C
amb
C
Characteristics are measurement with 4 mm (0.55") distance between emitter and detector, within a common axis of 0.5 mm (0.02") and
/I
/I
Figure 1. Power Dissipation Limit vs. Ambient Temperature
F
F
= 25 °C, unless otherwise specified
96 11947
200
180
160
140
120
100
Parameter
Parameter
Parameter
Parameter
80
60
40
20
0
0
IR- diode
Phototransistor
T
amb
25
- Ambient Temperature (°C)
50
t
T
V
V
V
I
I
R
I
I
I
DIN EN ISO 1146/1:2005
p
F
F
F
F
F
amb
CE
CE
CE
/T = 0.5, t ≤ 10 ms
L
= 20 mA, I
= 10 mA, V
= 50 mA
= 60 mA, t
= 100 mA
= 100 Ω
= 5 V, I
= 5 V, I
= 5 V, I
≤ 25 °C
75
Test condition
Test condition
Test condition
Test condition
F
F
F
P
C
= 20 mA
= 20 mA
= 20 mA
CE
= 20 ms
= 25 µA
100
= 5 V,
Symbol
Symbol
Symbol
V
CTR
CTR
I
CEsat
V
λ
C
f
Ø
I
C
e
P
1)
F
Symbol
V
V
I
CEO
ECO
P
CM
I
T
C
V
j
0.0125
0.25
1.25
Min
Min
Min
940
0.025
Value
1.25
Typ.
Typ.
Typ.
100
150
100
110
0.5
2.5
1.1
70
50
7
Document Number 83774
Max
Max
Max
0.4
1.6
7.8
Rev. 1.4, 04-Sep-06
Unit
mW
mA
mA
°C
V
V
mW/sr
Unit
Unit
kHz
Unit
mm
mA
nm
V
V

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