TFBS4710 Vishay, TFBS4710 Datasheet - Page 4

• Manufacturer Part Number: TFBS4710
• Description: Serial Infrared Transceiver Sir, 115.2 Kbit/s, 2.7 V To 5.5 V Operation
• Manufacturer: Vishay

TFBS4710
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
T
Transmitter
T
www.vishay.com
4
Minimum detection threshold
irradiance, SIR mode
Maximum detection threshold
irradiance
Maximum no detection
threshold irradiance
Rise time of output signal
Fall time of output signal
RXD pulse width
Leading edge jitter
Standby /Shutdown delay
Receiver startup time
Latency
IRED operating current
IRED forward voltage
IRED leakage current
Output radiant intensity
Output radiant intensity, angle of
half intensity
Peak-emission wavelength
Spectral bandwidth
Optical rise time
Optical fall time
Optical output pulse duration
Optical overshoot
amb
amb
= 25 °C, V
= 25 °C, V
Parameter
Parameter
CC
CC
= 2.4 V to 5.5 V unless otherwise noted
= 2.4 V to 5.5 V unless otherwise noted.
9.6 kbit/s to 115.2 kbit/s
O = 850 nm - 900 nm,
D = 0°, 15°
O = 850 nm - 900 nm
10 % to 90 %, C
90 % to 10 %, C
Input pulse width > 1.2 µs
Input Irradiance = 100 mW/m
d 115.2 kbit/s
After shutdown active
Power-on delay
I
TXD = 0 V, 0 < V
D = 0°, 15°, TXD = High,
SD = Low
V
TXD = High or SD = High (Receiver
is inactive as long as SD = High)
Input pulse width 1.63 µs,
115.2 kbit/s
Input pulse width t
Input pulse width t
r
CC
= 300 mA
= 5.0 V, D = 0°, 15°,
Test Conditions
Test Conditions
L
L
CC
= 15 pF
= 15 pF
TXD
TXD
< 5.5 V
< 20 µs
t 20 µs
2
,
Symbol
t
t
r(RXD)
f(RXD)
t
Symbol
E
E
E
PW
t
L
I
e
e
e
IRED
t
t
t
t
t
'O
ropt
O
fopt
I
V
opt
opt
opt
I
I
D
D
e
e
p
f
(1.0)
1.65
Min
10
10
10
1.46
t
Min
250
880
1.4
TXD
- 1
40
10
10
(500)
(2.5)
Typ.
2.0
25
± 24
1.63
Typ.
300
5
1.8
70
45
Document Number 82612
t + 0.15
(0.4)
Max
100
100
250
150
150
Max
0.04
3.0
350
350
900
100
100
40
(4)
1.9
1.8
Rev. 1.5, 23-Feb-06
50
25
4
1
(mW/cm
(µW/cm
(µW/cm
mW/m
mW/m
mW/sr
mW/sr
kW/m
Unit
Unit
mA
nm
nm
µA
ns
ns
µs
µs
µs
ns
ns
µs
ns
µs
µs
%
V
°
2
2
2
2
2
2
)
)
)