TFBS6711 Vishay, TFBS6711 Datasheet - Page 6

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TFBS6711

Manufacturer Part Number
TFBS6711
Description
Low Profile Fast Infrared Transceiver Fir, 4 Mbit/s For Irda Applications
Manufacturer
Vishay
Datasheet

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Optoelectronic Characteristics, continued
T
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Document Number 84676
Rev. 1.3, 21-Feb-07
IRED operating current,
switched current control
Output leakage IRED current
Output radiant intensity,
s. figure 3, recommended
application circuit
Output radiant intensity,
s. figure 3, recommended
application circuit
Output radiant intensity
Output radiant intensity, angle of
half intensity
Peak - emission wavelength
Optical rise time,
Optical fall time
Optical output pulse duration
Optical output pulse duration
Optical output pulse duration
Optical output pulse duration
Optical overshoot
amb
= 25 °C, V
Parameter
CC
= 2.4 V to 3.6 V unless otherwise noted.
For 3.3-V operation no external
resistor is needed.
V
V
TXD = High, SD = Low, R
V
TXD = High, SD = Low, R
V
TXD = Low or SD = High
(Receiver is inactive as long as
SD = High)
Input pulse width 217 ns,
1.152 Mbit/s
Input pulse width 125 ns, 4 Mbit/s
Input pulse width 250 ns, 4 Mbit/s
Input pulse width t < 80 µs
Input pulse width t t 80 µs
CC
CC
CC
CC1
= V
= V
= V
= 3.6 V, D = 0°, 15°
IRED
IRED
IRED
Test Conditions
= 3.3 V, TXD = Low
= 3.3 V, D = 0°
= 3.3 V, D = 0°, 15°
1
1
= 1:
= 1:
Symbol
I
t
IRED
t
ropt
t
t
t
t
t
O
fopt
I
opt
opt
opt
opt
opt
I
I
I
D
D
e
e
e
p
,
330
880
200
116
241
Min
- 1
45
25
10
20
Vishay Semiconductors
±
Typ.
440
115
217
125
250
75

t
24
TFBS6711
Max
0.04
600
300
300
900
230
134
259
40
85
25
1
www.vishay.com
mW/sr
mW/sr
mW/sr
Unit
mA
nm
µA
ns
ns
ns
ns
µs
µs
%
°
263

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