OM6517SW International Rectifier Corp., OM6517SW Datasheet

OM6517SW

Manufacturer Part Number

OM6517SW

Description

1200v Discrete Hi-rel Igbt In A D3 Package

Manufacturer

International Rectifier Corp.

Datasheet

1.OM6517SW.pdf (2 pages)

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INSULATED GATE BIPOLAR TRANSISTOR

(IGBT) IN A HERMETIC TO-254AA PACKAGE

4 11 R2

Supersedes 2 07 R1

FEATURES

• Isolated IGBTs In A Hermetic Package

• High Input Impedance

• Low On-Voltage

• High Current Capability

• High Switching Speed

• Low Tail Current

• Available Screened To MIL-S-19500, TX, TXV and S Levels

• Ceramic Feedthroughs Available

DESCRIPTION

This IGBT power transistor features the high switching speeds of a power MOSFET

and the low on-resistance of a bipolar transistor. It is ideally suited for high power

switching applications such as frequency converters for 3Ø motors, UPS and high

power SMPS.

MAXIMUM RATINGS

OM6517SA

OM6526SA

NUMBER

Gate

Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.

PART

SCHEMATIC

Collector

Emitter

MOD PAK

@ 90°C, A

IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

1000 Volt, 15 And 20 Amp, N-Channel IGBT

In A Hermetic Metal Package

(Cont.)

1000

(BR)CES

2 PLCS.

.125

.290

@ 25°C Unless Specified Otherwise

PACKAGE OPTIONS

3.1 - 157

Z-Pak

.940

.740

.540

.300

.150

CE (sat)

4.0

Z-TAB

.200

.125 DIA.

(Typ.)

2 PLS.

.500

MIN.

.250

.100

2 PLCS.

MECHANICAL OUTLINE

.540

.040 DIA.

3 PLCS.

.260

MAX

.150

(Typ.)

300

.040

.144 DIA.

°C/W

.685

.665

1.0

1.5

q q

.045

.035

TO-254

.545

.535

6 PIN SIP

125

.150 TYP.

.550

.510

.800

.790

.550

.530

150

°C

OM6517SA

OM6526SA

.260

.249

.150 TYP.

.050

.040

.005

3.1

Related parts for OM6517SW

OM6517SW Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR (IGBT HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Isolated IGBTs In A Hermetic Package • High Input Impedance • Low On-Voltage • High ...

Page 2

PRELIMINARY DATA: OM6517SA IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions V Collector Emitter 1000 V V (BR)CES CE Breakdown Voltage Zero Gate Voltage 0. CES CE Drain Current 1 ...

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