OM6516SC International Rectifier Corp., OM6516SC Datasheet
OM6516SC
Manufacturer Part Number
OM6516SC
Description
1200v Discrete Hi-rel Igbt In A To-258aa Package
Manufacturer
International Rectifier Corp.
Datasheet
1.OM6516SC.pdf
(2 pages)
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-258AA PACKAGE
4 11 R2
Supersedes 2 07 R1
FEATURES
• Isolated IGBTs In A Hermetic Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available With Free Wheeling Diode
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS
Gate
OM6516SC
OM6520SC
NUMBER
PART
OM6516SC
Collector
Emitter
SCHEMATICS
MOD PAK
@ 90°C, A
I
C
1000 Volt, 25 Amp, N-Channel IGBT
In A Hermetic Metal Package
(Cont.)
Gate
25
25
OM6520SC(w/Diode)
Collector
Emitter
NOTE: IGBTs are also available in Z-Tab, dual and quad
pak styles - Please call the factory for more information.
V
1000
1000
(BR)CES
V
PACKAGE OPTIONS
@ 25°C Unless Specified Otherwise
3.1 - 155
V
CE (sat)
4.0
4.0
V
(Typ.)
.165
.155
.200 TYP.
T
MECHANICAL OUTLINE
.707
.697
.750
.500
f
300
300
(Typ.)
ns
1
C
.695
.685
E
2
G
3
6 PIN SIP
°C/W
1.0
1.0
q q
JC
.835
.815
.140 TYP.
.550
.530
.065
.055
.270
.240
125
125
P
W
D
.092 MAX.
.045
.035
.005
150
150
°C
T
J
OM6516SC
OM6520SC
3.1
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OM6516SC Summary of contents
Page 1
... MECHANICAL OUTLINE .695 .165 .685 .155 .707 .697 .750 .500 .200 TYP. PACKAGE OPTIONS 6 PIN SIP 3.1 - 155 OM6516SC OM6520SC °C 3.1 125 150 125 150 .270 .240 .045 .035 .835 .815 .550 .530 .092 MAX. ...
Page 2
... PRELIMINARY DATA: OM6516SC IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions V Collector Emitter 1000 V V (BR)CES CE Breakdown Voltage Zero Gate Voltage 0. CES CE Drain Current 1 Gate Emitter Leakage ±100 nA V GES GE Current V CE Parameter - ON V Gate Threshold Voltage 4 ...