MBM29LV320TE Fujitsu Microelectronics, Inc., MBM29LV320TE Datasheet
MBM29LV320TE
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MBM29LV320TE Summary of contents
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... MBM29LV320TE MBM29LV320BE DESCRIPTION The MBM29LV320TE/ M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each words of 16 bits each. The device is offered in a 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to be programmed in-system with the standard system 3 for write or erase operations ...
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... MBM29LV320TE/BE (Continued) The device is pin and command set compatible with JEDEC standard E command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 5 ...
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... Fast Programming Function by Extended Command • Temporary sector group unprotection Temporary sector group unprotection via the RESET pin. • In accordance with CFI (Common Flash Memory Interface Embedded Erase TM and Embedded Program MBM29LV320TE/BE 2 PROMs Normal Bend Type, TR Reversed Bend Type) TM are trademarks of Advanced Micro Devices 80/90/10 , Inc ...
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... MBM29LV320TE/BE Normal Bend (FPT-48P-M19) (Marking Side MBM29LV320TE/BE 13 Reverse Bend (FPT-48P-M20 BYTE ...
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... A8 B8 N.C. N. N.C. N. RESET N.C. C4 RY/ N.C. N.C. MBM29LV320TE/BE FBGA (TOP VIEW) Marking Side BYTE ...
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... MBM29LV320TE/BE PIN DESCRIPTION MBM29LV320 TE/BE Pin Configuration Table Pin RY/BY RESET BYTE WP/ACC N. 80/90/10 Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Ready/Busy Output Hardware Reset Pin/Temporary Sector Group Unprotection Selects 8-bit or 16-bit mode ...
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... SS WE State BYTE Control RESET WP/ACC Command Register CE OE Low V Detector LOGIC SYMBOL 21 MBM29LV320TE/BE Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase X-Decoder Latch ...
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... See the section on “7. Sector Group Protection” in FUNCTIONAL DESCRIPTION. *3: WE can * also used for the extended sector group protection. *6: Conditional exceptions are to be noticed as follows: For MBM29LV320TE (SA22, 23) , WP/ACC 8 80/90/ ...
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... See the section on “7. Sector Group Protection” in FUNCTIONAL DESCRIPTION. *3: WE can * also used for the extended sector group protection. *6: Conditional exceptions are to be noticed as follows: For MBM29LV320TE (SA22, 23) , WP/ACC MBM29LV320TE/ ...
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... MBM29LV320TE/BE MBM29LV320TE/BE Command Definitions Table First Bus Bus Command Write Write Cycle Cycles Sequence Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Word Read/ 1 XXXh F0h Reset Byte Word 555h Read/ 3 Reset AAAh Byte 555h ...
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... The data "00h" is also acceptable. Notes: Address bits Sector Address (SA) . Bus operations are defined in “MBM29LV320TE/BE User Bus Operations Tables (BYTE = )” Address of the memory location to be read PA Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse. ...
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... MBM29LV320TE/BE MBM29LV320TE/BE Sector Group Protection Verify Autoselect Codes Table Type Manufacture’s Code MBM29LV320TE Device Code MBM29LV320BE Extend Device MBM29LV320TE/BE Code Sector Group Protection * for Byte mode Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. ...
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... FLEXIBLE SECTOR-ERASE ARCHITECTURE Sector Address Table (MBM29LV320TE) Sector Address Sec- tor SA0 SA1 SA2 SA3 SA4 SA5 ...
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... MBM29LV320TE/BE Sector Address Sec- tor SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 ...
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... SA69 SA70 Note : The address range The address range MBM29LV320TE/BE Sector Size (Kbytes/ Address Range Kwords 8/4 3F4000h to 3F5FFFh 8/4 3F6000h to 3F7FFFh ...
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... MBM29LV320TE/BE Sector Address Sec- tor SA70 SA69 SA68 SA67 SA66 SA65 SA64 SA63 ...
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... X SA8 SA7 SA6 SA5 MBM29LV320TE/BE Sector Size (Kbytes/ Address Range Kwords 64/32 1E0000h to 1EFFFFh 64/32 1D0000h to 1DFFFFh 64/32 1C0000h to 1CFFFFh 64/32 1B0000h to 1BFFFFh ...
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... MBM29LV320TE/BE (Continued) Sector Address Sec- tor SA4 SA3 SA2 SA1 SA0 Note : The address range The address range ...
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... Sector Group Address Table (MBM29LV320TE) Sector Group SGA0 SGA1 SGA2 SGA3 SGA4 SGA5 SGA6 SGA7 SGA8 SGA9 SGA10 SGA11 SGA12 SGA13 SGA14 SGA15 ...
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... MBM29LV320TE/BE Sector Group Address Table (MBM29LV320BE) Sector Group SGA0 0 0 SGA1 0 0 SGA2 0 0 SGA3 0 0 SGA4 0 0 SGA5 0 0 SGA6 0 0 SGA7 0 0 SGA8 0 0 SGA9 0 0 SGA10 0 0 SGA11 0 0 SGA12 0 1 SGA13 0 1 SGA14 0 1 SGA15 ...
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... N Device Size 2 byte Flash Device Interface description Max number of byte in N multi-byte write 2 Number of Erase Block Regions within device Erase Block Region 1 Information Erase Block Region 2 Information MBM29LV320TE/ 10h 11h 12h 13h 14h 15h 16h not applicable) 17h 18h ...
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... (Acceleration) Supply Maximum ACC 00h Not Supported V/bit Boot Type 02h MBM29LV320BE 03h MBM29LV320TE 22 80/90/10 : 100 mV/bit : 100 mV/bit 40h 0050h 41h 0052h 42h 0049h 43h 0031h 44h 0031h ...
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... The manufacturer and device codes may also be read via the command register, for instances when the device is erased or programmed in a system without access to high voltage on the A illustrated in “MBM29LV320TE/BE Command Definitions Table” ( DEVICE BUS OPERATIONS) (See “2. Autoselect Command” in COMAND DIFINITIONS) . ...
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... and A ) should be set to the sector to be protected. “Sector Address Tables (MBM29LV320TE/BE)” FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector address for each of the seventy one (71) individual sectors, and “Sector Group Address Tables (MBM29LV320TE/BE)” in ARCHITECTURE define the sector group address for each of the twenty five (25) individual group sectors. ...
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... SA69 and SA70, MBM29LV320BE : SA0 and SA1) If the system asserts V on the WP/ACC pin, the device reverts to whether the two outermost 8 K byte boot IH sectors were last set to be protected or unprotected ...
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... A read cycle from address (XX) 03h for 16 ( (XX) 06h for 8) returns the extended device code. (See “MBM29LV320TE/BE Sector Group Protection Verify Autoselect Codes Table” and “Expanded Autoselect Code Table” in TIONS ...
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... TOW Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29LV320TE/BE Command Definitions Table” in Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than “ ...
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... MBM29LV320TE/BE a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations. The system can determine the status of the erase operation by using DQ RY/BY. The sector erase begins after the “t the last sector erase command pulse and terminates when the data on DQ Status” ...
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... The Hi-ROM region is 256 bytes in length and is stored at the same address of the “outermost” byte boot sector. The MBM29LV320TE occupies the address of the byte mode 3FFFC0h to 3FFFFFh (word mode 1FFFE0h to 1FFFFFh) and the MBM29LV320BE type occupies the address of the byte mode 000000h to 000080h (word mode 000000h to 000040h) ...
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... MBM29LV320TE/BE 11. Hidden ROM (Hi-ROM) Protect Command There are two methods to protect the Hidden ROM area. One is to write the sector group protect setup command (60h) , set the sector address in the Hidden ROM area and (A protect command (60h) during the Hidden ROM mode. The same command sequence could be used because it is the same as the extension sector group protect in the past except that the Hidden ROM mode and it does not apply high voltage to RESET pin. Please see “ ...
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... Data Polling is the only operating function of device under this condition. The CE circuit will partially power down device under these conditions (to approximately 2 mA) . The OE and MBM29LV320TE/BE . Upon completion of the Embedded Program Algorithm, an attempt During the Embedded Erase Algorithm, an attempt to read 7 output ...
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... MBM29LV320TE/BE WE pins will control the output disable functions as described in “MBM29LV320TE/BE User Bus Operations Tables (BYTE = V and BYTE = V IH The DQ failure condition may also appear if a user tries to program a non blank location without erasing. In this 5 case the device locks out and never complete the Embedded Algorithm operation. Hence, the system never ...
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... Read mode. Also, with its control register architecture, alteration of memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from V and power-down transitions or system noise. MBM29LV320TE/BE through successive read cycles, deter- 5 Toggle Bit Status Table ...
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... MBM29LV320TE/BE 22. Low V Write Inhibit CC To avoid initiation of a write cycle during V than V (Min LKO CC LKO disabled. Under this condition the device will reset to the read mode. Subsequent writes will be ignored until the V level is greater than the users responsibility to ensure that the control pins are logically correct to ...
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... MBM29LV320TE/BE Symbol Min Tstg 0.5 IN OUT 0.5 ACC = GND = Part No. MBM29LV320TE/BE 80/90/10 MBM29LV320TE/BE 80/90 MBM29LV320TE/BE 10 80/90/10 Rating Unit Max 125 0 4.0 V 13.0 V 13.0 V 2.0 V for periods and RESET and RESET pins 9 is applied. CC Value Unit ...
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... MBM29LV320TE/BE MAXIMUM OVERSHOOT/UNDERSHOOT 0.6 V 0 2.0 V 14 Note : This waveform is applied for A 36 80/90/ Maximum Undershoot Waveform Maximum Overshoot Waveform OE, and RESET. 9 Maximum Overshoot Waveform 2 ...
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... DC operating current and the frequency dependent component active while Embedded Algorithm (program or erase progress Automatic sleep mode enables the low power mode when addresses remain stable for 150 ns Applicable for only V applying. CC MBM29LV320TE/BE Symbol Conditions ...
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... Output Hold Time From Addresses OE, Whichever Occurs First RESET Pin Low to Read Mode CE to BYTE Switching Low or High * : Test Conditions : Output Load : 1 TTL gate and 30 pF (MBM29LV320TE80, MBM29LV320BE80) Input rise and fall times : 5 ns Input pulse levels : 0 3.0 V Timing measurement reference level Input : 1.5 V Output : 1 ...
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... ACC Voltage Transition Time * 2 Write Pulse Width * 2 OE Setup Time to WE Active * Setup Time to WE Active * Recover Time From RY/BY RESET Pulse Width RESET High Level Period Before Read MBM29LV320TE/BE Symbol 80 (Note) JEDEC Standard Min Typ Max Min AVAV ...
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... MBM29LV320TE/BE (Continued) Parameter BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time *1 : This does not include the preprogramming time This timing is for Sector Group Protection operation. ...
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... Note : Test conditions FBGA PIN CAPACITANCE Parameter Input Capacitance C IN Output Capacitance C OUT Control Pin Capacitance C IN2 WP/ACC Pin Capacitance C IN3 Note : Test conditions MBM29LV320TE/BE Limits Min Typ Max 360 8 300 100 cycle Symbol Condition ...
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... MBM29LV320TE/BE TIMING DIAGRAM • Key to Switching Waveforms 1. Read Operation Timing Diagram Address Outputs 42 80/90/10 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Change Change from from May Will Change Change from from "H" or "L" ...
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... D is the output of the data written to the device. OUT Figure indicates last two bus cycles out of four bus cycle sequence. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) MBM29LV320TE/ Address Stable t ACC t ...
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... MBM29LV320TE/BE 4. Alternate CE Controlled Program Operation Timing Diagram Address Data Notes : PA is address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device the output of the data written to the device. ...
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... GHWL AAh Data t VCS the sector address for Sector Erase. Addresses Note : These waveforms are for the 16 mode. (The addresses differ from 8 mode.) MBM29LV320TE/BE 2AAh 555h 555h WPH t DH 55h 80h AAh 555h (Word), AAAh (Byte) for Chip Erase. ...
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... MBM29LV320TE/BE 6. Data Polling during Embedded Algorithm Operation Timing Diagram Data Data 6 0 RY/ Valid Data (The device has completed the Embedded operation Toggle Bit I during Embedded Algorithm Operation Timing Diagram Data ( Stops toggling. (The device has completed the Embedded operation.) ...
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... read from the erase-suspended sector RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY 10. RESET, RY/BY Timing Diagram WE RESET RY/BY MBM29LV320TE/BE Enter Erase Suspend Program Erase Suspend Erase Read Suspend Read Program Rising edge of the last write pulse Entire programming or erase operations t ...
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... MBM29LV320TE/BE 11. Word Mode Configuration Timing Diagram CE BYTE ELFH 12. Byte Mode Configuration Timing Diagram CE BYTE t ELFL 13. BYTE Timing Diagram for Write Operations BYTE 48 80/90/ Data Output Data Output ( ( ...
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... VLHT VLHT WE CE Data t VCS V CC SPAX : Sector Group Address to be protected. SPAY : Next Sector Group Address to be protected. Note : byte mode MBM29LV320TE/BE t VLHT t WPP t OESP t CSP 80/90/10 SPAY t VLHT 01h ...
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... MBM29LV320TE/BE 15. Temporary Sector Group Unprotection Timing Diagram VIDR t VCS RESET CE WE RY/BY 50 80/90/10 t Program or Erase Command Sequence VLHT Unprotection period t VLHT t VLHT ...
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... RESET t VLHT VIDR Address Data 60h SPAX : Sector Group Address to be protected SPAY : Next Sector Group Address to be protected TIME-OUT : Time-Out window 250 s (Min) MBM29LV320TE/ SPAX SPAX TIME-OUT 60h 40h 80/90/10 SPAY 01h 60h ...
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... MBM29LV320TE/BE 17. Accelerated Program Timing Diagram VACCR t VCS V ACC 3 V WP/ACC CE WE RY/BY 52 80/90/10 t Program Command Sequence VLHT Acceleration period t VLHT t VLHT ...
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... FLOW CHART 1. Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Note : The sequence is applied for The addresses differ from MBM29LV320TE/BE Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) 555h/AAh ...
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... MBM29LV320TE/BE 2. Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command) Note : The sequence is applied for The addresses differ from 54 80/90/10 Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm No in progress Data FFh ? Yes Erasure Completed Individual Sector/Multiple Sector ...
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... Data Polling Algorithm * : DQ is rechecked even MBM29LV320TE/BE VA Start Read Byte ( Addr. VA Yes DQ Data Yes Read Byte ( Addr. VA Yes DQ Data Fail Pass “1” because DQ may change simultaneously with DQ 7 80/90/10 Address for programming ...
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... MBM29LV320TE/BE 4. Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether or not it is toggling Recheck toggle bit because it may stop toggling 80/90/10 Start Read Addr. "H" or "L" *1 Read Addr. "H" or "L" Toggle? Yes ...
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... Sector Group Protection Algorithm Increment PLSCNT PLSCNT Remove V Write Reset Command Device Failed * : byte mode MBM29LV320TE/BE Start Setup Sector Group Addr PLSCNT RESET ...
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... MBM29LV320TE/BE 6. Temporary Sector Group Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. 58 80/90/10 Start RESET Perform Erase or Program Operations RESET V IH Temporary Sector Group Unprotection Completed *2 ...
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... Extended Sector Group Protection Algorithm Device is Operating in Temporary Sector Group Unprotection Mode Increment PLSCNT No PLSCNT 25? Yes Remove V from RESET ID Write Reset Command Device Failed MBM29LV320TE/BE Start RESET V ID Wait Extended Sector Group Protection Entry? Yes To Setup Sector Group Protection Write XXXh/60h PLSCNT 1 ...
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... MBM29LV320TE/BE 8. Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from 60 80/90/10 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address ? Yes Programming Completed XXXXh/90h XXXXh/F0h 16 mode ...
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... E 80 DEVICE NUMBER/DESCRIPTION MBM29LV320 32Mega-bit (4 M 3.0 V-only Read, Program, and Erase Valid Combinations 80 MBM29LV320TE/ MBM29LV320TE/BE TN PACKAGE TYPE TN 48-Pin Thin Small Outline Package (TSOP) Standard Pinout TR 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout PBT 63-Ball Fine pitch Ball Grid Array ...
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... MBM29LV320TE/BE PACKAGE DIMENSION 48-pin plastic TSOP (I) (FPT-48P-M19) LEAD No. 1 INDEX 24 "A" 2001 FUJITSU LIMITED F48029S-c-4-5 C 48-pin plastic TSOP (I) (FPT-48P-M20) LEAD No. 1 INDEX 24 * 2000 FUJITSU LIMITED F48030S-3c 80/90/10 * Resin Protrusion. (Each Side: 0.15 (.006) Max 20.00 ± 0.20 (.787 ± .008) * 18.40 ± 0.20 (.724 ± ...
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... FBGA (BGA-63P-M01) 11.00 0.10(.433 .004) INDEX AREA 0.10(.004) 2001 FUJITSU LIMITED B63001S-c-2-2 C MBM29LV320TE/BE +0.15 1.05 –0.10 +.006 .041 –.004 (Mounting height) 0.38 0.10 (.015 .004) (Stand off) (4.00(.157)) 7.00 0.10 (.276 .004) (5.60(.220 80/90/10 (8.80(.346)) (7.20(.283)) (5.60(.220)) 0.80(.031)TYP ...
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... MBM29LV320TE/BE FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Marketing Division Electronic Devices Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0721, Japan Tel: +81-3-5322-3353 Fax: +81-3-5322-3386 http://edevice.fujitsu.com/ North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 3545 North First Street, San Jose, CA 95134-1804, U ...