MBM29PL3200BE Fujitsu Microelectronics, Inc., MBM29PL3200BE Datasheet - Page 42
MBM29PL3200BE
Manufacturer Part Number
MBM29PL3200BE
Description
Page Mode Flash Memory 32 M 2 M X 16/1 M X 32 Bit
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
1.MBM29PL3200BE.pdf
(59 pages)
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Part Number:
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MBM29PL3200TE/BE
Notes : 1.PA is address of the memory location to be programmed.
2.PD is data to be programmed at word address.
3.DQ
4.D
5.Figure indicates last two bus cycles out of four bus cycle sequence.
6.These waveforms are for the
Figure 7 Alternate CE Controlled Program Operation Timing Diagram
OUT
7
is the output of the complement of the data written to the device.
is the output of the data written to the device.
Address
Data
WE
OE
CE
t
GHEL
t
WS
3rd Bus Cycle
555h
t
WC
t
t
A0h
DS
CP
70/90
32 mode. (The addresses differ from
t
CPH
t
AS
t
t
WH
DH
PA
t
PD
AH
t
Data Polling
WHWH1
DQ
PA
7
D
OUT
16 mode.)
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